Sonstiges, Englisch, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-0357-1981-9
Verlag: Trans Tech Publications
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at ?La Badine? at the Giens peninsula south of France.
Autoren/Hrsg.
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Weitere Infos & Material
Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal DiffusionPrecipitation Enhancement of "so Called" Defect-Free Czochralski Silicon MaterialOxygen Precipitation in Nitrogen Doped CZ SiliconFrom Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS StructuresPassivation of Ge Nanocrystals in SiO2The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide MatrixUse of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETsLaser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx FilmsStability of Emission Properties of Silicon NanostructuresBlue Photoluminescence from Quantum Size Silicon NanopowderEvolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO2 Layer Obtained by Low Energy Ion ImplantationCarrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 LayerGe Nanoclusters in GeO2: Synthesis and Optical Properties?-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski SiliconMorphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon WafersElectrical Properties of Clustered and Precipitated Iron in SiliconGettering Mechanism of Cu in Silicon Calculated from First PrinciplesEnergetics and Kinetics of Defects and Impurities in Silicon from Atomistic CalculationsMicroscopic Mechanisms of Cobalt Disilicide Nucleation in SiliconThe Influence of Nitrogen on Dislocation Locking in Float-Zone SiliconAmorphisation and Recrystallisation of Nanometre Sized Zones in SiliconImpact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in SiliconFTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing TimeInfluence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-SiAb Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon"New Donors" in Czochralski Grown Silicon Annealed at T= 600?C under Compressive StressFormation of the Buried Insulating SixNy Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon WaferA Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and ReactivityPeculiarities of the Initial Stage of Oxygen Precipitation in Irradiated SiliconThe Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped SiliconEvolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser AnnealingEffect of Hydrogenation on Defect Reactions in Silicon Particle DetectorsMetastable VO2 Complexes in Silicon: Experimental and Theoretical Modeling StudiesHydrogen-Related Donors in Silicon: Centers with Negative Electronic Correlation EnergyQuantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and CarbonStudy of Au Diffusion in Nitrogen-Doped FZ Si Control of Oxygen Precipitation in Silicon by Infrared Laser IrradiationElectronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS StudiesVOn (n=3) Defects in Irradiated and Heat-Treated SiliconElectronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in SiliconImpact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in SiliconOn the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer LayersNovel Low-K Dielectric Obtained by Xenon Implantation in SiO2Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide GrowthStructure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted SiliconImpact of Hydrogen Implantation on Helium Implantation Induced DefectsBulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons Defect Engineering in Ion Beam Synthesis of SiC and SiO2 in SiElectrical Passivation of Silicon WafersPoint Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System PropertiesMagnetic-Field-Induced Modification of Properties of Silicon Lattice DefectsPhase Transition on Surface of IV Group Semiconductors by Laser RadiationStress - Dependent Out - Annealing of Defects in Self - Implanted SiliconA New Approach to Study the Damage Induced by Inert Gases Implantation in SiliconFirst Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski SiliconOn the Effect of Lead on Irradiation Induced Defects in SiliconFormation and Properties of Iron-Phosphorus and Iron-Phosphorus-Hydrogen Complexes in SiliconDetermination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon BacksideEffect of Self-Interstitials ? Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in SiSilicon Doped with Sulfur as a Detector Material for High Speed Infrared Image ConvertersTheoretical Investigations of the Diffusion of Nitrogen-Pair Defects in SiliconGeneral Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium CrystalsLow-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased ControllabilityDefect Interaction Mechanisms between Antimony and Indium in SiliconFormation of Vacancies and Divacancies in Plane-Stressed SiliconSelective SiGe Etching Formed by Localized Ge Implantation on SOIImpact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual SubstratesCharacterization of SiGe Layer on Insulator by In-Plane Diffraction MethodThe Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures Strained Silicon on Ultrathin Silicon-Germanium Virtual SubstratesRadiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS ?avity Effect in Hydrogen Ion Implanted Silicon-On-Insulator StructuresMisfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication Quantum Well Related Conductivity and Deep Traps in SiGe/Si StructuresThe Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline SiliconSilicon Layers Grown on Siliconized Carbon Net: Producing and PropertiesCrack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers Multicrystalline Silicon from Different Types of Bridgman Furnaces: Ingot and Cell PropertiesBehaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon WafersImproved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar CellsInvestigation of Defects in the Edge Region of Multicrystalline Solar Silicon IngotsElectrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI DevicesDLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed SiliconDefect Behaviour in Deuterated and Non-Deuterated n-Type SiThermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-SiCobalt Contamination in Silicon Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline SiliconComparison of Efficiencies of Different Surface Passivations Applied to Crystalline SiliconImproved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process OptimizationPotential and Limitations of Electron Holography in Silicon ResearchAnnealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ SiliconAtomic Environment of Positrons Annihilating in HT Cz-Si Crystal Infrared Absorption Measurement of Carbon Concentration down to 1x1014/cm3 in CZ SiliconEBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet SiliconThe Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray DiffractionIn-Line Monitor Introduction to Prevent Metallic Contamination in Wet BenchMeasurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime MethodsThe Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon InterfaceMeasurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR SpectroscopySilicon Carbide: Defects and DevicesAb Initio Investigations of Threshold Displacement Energies and Stability of Associated Defects in Cubic Silicon CarbideElectrical Characterizations of Hydrogenated 4H-SiC Epitaxial SamplesRecent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium SubstratesTheoretical Investigations of the Energy Levels of Defects in GermaniumSome Recent Advances on the n-Type Doping of DiamondHelium Implantation Damage in SiC6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy Current Transport by Defects in Pr2O3 High K FilmsPulsed Laser Deposition of Hafnium Oxide on SiliconModification of Silicon Oxide by High Energy Electron BeamCalibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption Structural Characterization of Epitaxial Si / Pr2O3 / Si(111) Heterostructures Silicon Based Light Emitters for On-Chip Optical InterconnectsRare Earth Ion Implantation for Silicon Based Light EmissionSiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band TransitionsFine Structure of Dislocation Related PL Bands D1 and D2 in SiliconDislocation Related PL of Multi-Step Annealed Cz-Si SamplesDefect Formation in MBE Er-Doped Si Light-Emitting Structures Atomistic Nanodevice SimulationInterfacing Biology with Electronic DevicesThin SiGe Relaxed Buffer for Strain Adjustment
