E-Book, Englisch, 830 Seiten
Pichaud / Claverie / Alquier Gettering and Defect Engineering in Semiconductor Technology XI
Erscheinungsjahr 2005
ISBN: 978-3-03813-029-1
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection
E-Book, Englisch, 830 Seiten
ISBN: 978-3-03813-029-1
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection
Volume is indexed by Thomson Reuters CPCI-S (WoS).This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Committees
Preface
Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion
Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material
Oxygen Precipitation in Nitrogen Doped CZ Silicon
From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures
Passivation of Ge Nanocrystals in SiO2
The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix
Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films
Stability of Emission Properties of Silicon Nanostructures
Blue Photoluminescence from Quantum Size Silicon Nanopowder
Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO2 Layer Obtained by Low Energy Ion Implantation
Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer
Ge Nanoclusters in GeO2: Synthesis and Optical Properties
µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon
Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon
Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers
Electrical Properties of Clustered and Precipitated Iron in Silicon
Gettering Mechanism of Cu in Silicon Calculated from First Principles
Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations
Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon
The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon
Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
"New Donors" in Czochralski Grown Silicon Annealed at T= 600°C under Compressive Stress
Formation of the Buried Insulating SixNy Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer
A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity
Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon
The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon
Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing
Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors
Metastable VO2 Complexes in Silicon: Experimental and Theoretical Modeling Studies
Hydrogen-Related Donors in Silicon: Centers with Negative Electronic Correlation Energy
Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon
Study of Au Diffusion in Nitrogen-Doped FZ Si
Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation
Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys
Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
VOn (n=3) Defects in Irradiated and Heat-Treated Silicon
Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon
On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers
Novel Low-K Dielectric Obtained by Xenon Implantation in SiO2
Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth
Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon
Impact of Hydrogen Implantation on Helium Implantation Induced Defects
Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons
Defect Engineering in Ion Beam Synthesis of SiC and SiO2 in Si
Electrical Passivation of Silicon Wafers
Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties
Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects
Phase Transition on Surface of IV Group Semiconductors by Laser Radiation
Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon
First Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski Silicon
On the Effect of Lead on Irradiation Induced Defects in Silicon
Formation and Properties of Iron-Phosphorus and Iron-Phosphorus-Hydrogen Complexes in Silicon
Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside
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