Sonstiges, Englisch, Band Volume 242, 500 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Solid State Phenomena
Sonstiges, Englisch, Band Volume 242, 500 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Solid State Phenomena
ISBN: 978-3-03859-398-0
Verlag: Trans Tech Publications
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Growth of Czochralski Silicon Crystals Having Ultralow Carbon ConcentrationsElectrically Inactive Dopants in Heavily Doped As-Grown Czochralski SiliconOrientation Dependency of Dislocation Generation in Si Growth ProcessRecent Progress of Crystal Growth Technology for Multi-Crystalline Silicon Solar Ingot50 cm Size Seed Cast Si Ingot Growth and its CharacterizationStatistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification TechniquePotential Synthesis of Solar-Grade Silicon from Rice Husk AshValence-Mending Passivation of Si(100) Surface: Principle, Practice and ApplicationImpact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor CapacitorsStable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar CellsInvestigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-SiBO-Related Defects: Overcoming Bulk Lifetime Degradation in Crystalline Si by RegenerationDiscussion of ASi-Sii-Defect Model in Frame of Experimental Results on P Line in Indium Doped SiliconInvestigation into Efficiency-Limiting Defects in mc-Si Solar CellsExperimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type SiliconLow Temperature Internal Gettering of Bulk Defects in Silicon Photovoltaic MaterialsLow Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon WafersMinority Carrier Lifetime Improvement of Multicrystalline Silicon Using Combined Saw Damage Gettering and Emitter FormationVacancy Species Produced by Rapid Thermal Annealing of Silicon WafersElectronic Properties of DislocationsInterplay of Ni and Au Atoms with Dislocations and Vacancy Defects Generated by Moving Dislocations in SiSpatial Distribution of the Dislocation Trails in SiliconHydrogen-Vacancy Complexes and their Deep States in n-Type SiliconMetastable Defects in Proton Implanted and Annealed SiliconThe Efficiency of Hydrogen-Doping as a Function of Implantation TemperatureCarbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient SpectroscopyDetermination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H+ Ion Implantation into Silicon and AnnealingKinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid SolutionsDirect Observations of Fe Impurities in Si with Different Fermi Levels by Mo?ssbauer SpectroscopyMo?ssbauer Spectroscopy on Fe Impurities in Si MaterialsEnhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen AmbientA Density Functional Study of Iron Segregation at ISFs and S5-(001) GBs in mc-SiDetermination of Activation Energy of the Iron Acceptor Pair Association and Dissociation ReactionInternal Gettering of Copper for Microelectronic ApplicationsSegregation Gettering Model for Nickel in p/p+ Silicon WafersDetection and Prevention of Palladium Contamination in Silicon DevicesModeling the Post-Implantation Annealing of PlatinumElectrical Levels and Diffusion Barriers of Early 3d and 4d Transition Metals in SiliconSearch for Effective Sites of Proximity Gettering Induced by Ion Implantation in Si Wafers with First Principles CalculationEffect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ SiliconBoron-Related Defects in Low Temperature Irradiated SiliconStructure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in SiliconSimilarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n?FZ?Si:P CrystalsInterstitial Carbon in p-Type Copper-Doped SiliconInteraction of Interstitial Copper with Isolated Vacancies in SiliconCharacterization of Si Convertors of Beta-Radiation in the Scanning Electron MicroscopeElectrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and ProtonsSpin Relaxation Times of Donor Centers Associated with Lithium in Monoisotopic 28 SiThe Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped SiliconHeat Flow and Defects in Semiconductors: beyond the Phonon Scattering AssumptionReduced Thermal Conductivity in Silicon Thin-Films via VacanciesGe and GeSn Light Emitters on SiAnalysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active LayersElectrical Characterization and Defect-Related Luminescence in Oxygen Implanted SiliconDefect Formation in Ion-Implanted Si - Approach to Controlled Semiconductor Optical PropertiesA Nanoscale Adventure with Silicon: Synthesis, Surface Chemistry, and other SurprisesDefect Composition in Acceptor Doped ZnO Quantum StructuresZnO Nanoparticle Formation in 64Zn+ Ion Implanted Al2O3Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured SiliconInfluence of Composition of Aqueous Electrolytes on Anisotropy of Porous Layer Formation Rate in Heavily Doped SiliconInvestigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic DevicesRadiation Damage in 4H-SiC and its Effect on Power Device CharacteristicsElectrical Characterization of Defects Introduced in n-Type N-Doped 4H-SiC during Electron Beam ExposureA New Approach for Calculating the Band Gap of Semiconductors within the Density Functional Method
Ab Initio Study of MgSe Self-Interstitial (Mgiand Sei)Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale DevicesCapacitance Transient Spectroscopy Measurements on High-k Metal Gate Field Effect Transistors Fabricated Using 28nm Technology NodeComparative Investigations of the Surface Damage of Monocrystalline Silicon Wafers by Scanning Infrared Reflection Examination and Raman SpectroscopyNon-Visual Defect Monitoring with Surface Voltage Mapping: Application for Semiconductor IC and PV TechnologyComparative Spatially Resolved Characterization of a Czochralski-Grown Silicon Crystal by Different Laser-Based Imaging TechniquesImaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence
