RADIATION IMAGING DETECTORS US

Erscheinungsjahr 2017
ISBN: 978-1-62705-696-0
Verlag: MORGAN & CLAYPOOL

Buch, Englisch, 71 Seiten, Paperback, Format (B × H): 190 mm x 235 mm

Reihe: Synthesis Lectures on Emerging Engineering Technologies

Silicon-on-Insulator (SOI) technology is widely used in high-performance and low-power semiconductor devices. The SOI wafers have two layers of active silicon (Si), and normally the bottom Si layer is a mere physical structure. The idea of making intelligent pixel detectors by using the bottom Si layer as sensors for X-ray, infrared light, high-energy particles, neutrons, etc. emerged from very early days of the SOI technology. However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently.

This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors. It introduces basic issues to implement the SOI detector and presents how to solve these issues. It also reveals fundamental techniques, improvement of radiation tolerance, applications, and examples of the detectors.

Since the SOI detector has both a thick sensing region and CMOS transistors in a monolithic die, many ideas have emerged to utilize this technology. This book is a good introduction for people who want to develop or use SOI detectors.

Autoren/Hrsg.

Inhaltsverzeichnis

- Preface
- Acknowledgments
- Introduction
- Major Issues in SOI Pixel Detector
- Basic SOI Pixel Process
- Radiation Hardness Improvements
- Advanced Process Developments
- Detector Research and Developments
- Summary
- Bibliography
- Authors' Biographies