Raineri / Priolo / Kittler Gettering and Defect Engineering in Semiconductor Technology IX

Erscheinungsjahr 2001
ISBN: 978-3-0357-0707-6
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 850 Seiten

Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.Volume is indexed by Thomson Reuters CPCI-S (WoS).The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Autoren/Hrsg.

Raineri, Vito

Priolo, F.

Kittler, Martin

Richter, Hans

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Preface
Silicon Wafer Requirements for ULSI Device Processing
Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing
On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals
Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior
The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions
Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth
Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
Infrared Absorption Analysis of Nitrogen in Czochralski Silicon
Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers
Optical Properties of Oxygen Agglomerates in Silicon
Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects
Silicon Isotope Shifts of the 648-cm-1 Infrared Absorption Line of Oxygen in Silicon
Thermal Donors in Silicon Implanted with Rare Earth Impurities
Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon
Vibrational Modes of Oxygen Dimers in Germanium
Oxygen Precipitation in Silicon Doped with Tin
Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon
Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon
Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing
Hydrogen Interaction with Transition Metals in Silicon, Studied by Electron Paramagnetic Resonance
Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon
Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching
Hydrogen-Related Defects in High-Resistivity Silicon
Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon
Atomistic Study of Boron Clustering in Silicon
Self-Interstitial Kinetics and Transient Phenomena in Si Crystals
Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles
Incorporation, Diffusion and Agglomeration of Carbon in Silicon
Suppression of Boron Transient Enhanced Diffusion by C Trapping
Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling
Room Temperature Point Defect Migration in Crystalline Si
Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy
The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon
Stress-Induced Redistribution of Point Defects in Silicon Device Structures
Characterization of Interstitial-Related Bulk Defects in p- Silicon Substrates by Epitaxial Deposition
Monitoring of Defects in Thermal Oxides during Electrical Stress
Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
A Study of the Conversion of the VO to the VO2 Defect in Heat-Treated Silicon under Stress
Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects
Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon
Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?
Void Shrinkage during Thermal Oxidation of Silicon
Gettering Induced by Helium Implantation: Application to a Device
Defects Created by Helium Implantation at Different Temperatures in Silicon
Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon
Gold Gettering by H+ or He++ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers
Influence of Depth in Helium Desorption from Cavities Induced by 3He Implantation in Silicon
Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus
Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p+ Epitaxial Wafers
Copper-Defect and Copper-Impurity Interactions in Silicon
Efficiency of Intrinsic Gettering for Copper in Silicon
Nickel Gettering in Silicon: Role of Oxygen
Electrical Activity of Dislocations in Si Decorated by Ni
Comparison of Nickel and Iron Gettering in Cz Silicon Wafers
Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections
Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals
The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18µm Advanced CMOS Logic Process
Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers
Defect Engineering and Prevention of Impurity Gettering at RP/2 in Ion-Implanted Silicon
Gettering Technology Based on Porous Silicon
Platinum Silicide Precipitate Formation During Phosphorus Diffusion Gettering in Silicon
Impact of a Cooling Process on the Dopant Activity of Platinum in Silicon
Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon
Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown
Radiation-Induced Electronic Defect Levels in High-Resistivity Si Detectors
p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates
Radiation Damage in MOS Structures, Irradiated with High-Energy Heavy Ions and Fast Neutrons, with Regard to Charge DLTS and C-V Measurements
Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model
Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation
Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films
Proton Irradiation Effects on Standard and Oxygenated Silicon Diodes
Existence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX Wafers
Hydrogen-Related Phenomena in SOI Fabricated by Using H+-Ion Implantation
Hydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen Slicing
Properties of Silicon Film in a Silicon-on-Glass Structure
Structural and Photoluminescence Properties of H+ Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen Slicing
Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries
Characterization of SiC Grown on Si(111) by Supersonic C60 Beams
Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD
Cavities in He-Implanted SiC
Study of Relaxed Si0.7Ge0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy
On the Properties of Divacancies in Si1-xGex
Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si1-xGex Structures Grown by Molecular Beam Epitaxy with Combined Sources
Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si1-xGex Alloy
Defect-Related Current Instabilities in InAs/GaAs and AlGaAs/GaAs Structures?
Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses
Defects in CdTe Induced by Powerful Laser Radiation
Phonon-Plasmon Interaction in Tunnelling GaAs/AlAs Superlattices Grown on (311) and (100) Substrates
Radiation-Stimulated Ordering Effect in CdS Crystals
The Laser-Stimulated Modification of the Surfaces of Polycrystalline CdTe Layers
Electroluminescence of Si Quantum Dots in MOS Structures
Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge+ Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing
Silicon Nanoclusters in Thermal Oxide Films on Silicon
Luminescence from Si Nanocrystals and Er3+ Ions Embedded in Resonant Cavities
Temporal Characteristics of the Optical Storage Effect in Si:Er
Effect of Selective Doping on Photo- and Electroluminescence Efficiency in Si:Er Structures
The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering
Defect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth Ions
Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping
Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon
Nanocrystal MOS Memories Obtained by LPCVD Deposition of Si Nanograins
Memory Effects in Single-Electron Nanostructures
Nanocrystal MOS with Silicon-Rich Oxide
Self-Orientation of Silicon Nanocrystals Created under Pulse Laser Impact in Stressed a-Si:H Films on Glass Substrates
Nucleation of Nanostructures from Surface Defects on Silicon
Crystalline Silicon for Solar Cells
Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells
Oxygen Annealing Behavior in Multicrystalline Silicon
Three-Dimensional Emitter Based on Locally Enhanced Diffusion (TREBLE) Structure: Modeling and Formation
Effective Gettering Mechanisms in Solar Multicrystalline Materials
Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction
Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures
Lock-In IR-Thermography – A Novel Tool for Material and Device Characterization
Characterisation of Surface and Near-Surface Regions in High-Purity Cz Si
A Technique for Delineating Defects in Silicon
SEM Vision Periodic Defect Review and Characterization after Inter-Metal Dielectric Deposition
Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model
Evaluation of Effective Carrier Lifetime in Epitaxial Silicon Layers
Spatial Distribution of Strain and Phases in Si Nano-Indentation Analysed by Raman Mapping
Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)
Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon
1D-ACAR Studies of As-Grown Impurity Centers in Silicon
Characterization of Interfacial States at Silicon Bicrystals
Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current