Gettering and Defect Engineering in Semiconductor Technology IX

Erscheinungsjahr 2001
ISBN: 978-3-0357-0923-0
Verlag: Trans Tech Publications

Sonstiges, Englisch, 850 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Autoren/Hrsg.

Raineri, Vito

Priolo, F.

Kittler, Martin

Richter, Hans

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Silicon Wafer Requirements for ULSI Device ProcessingOrthogonal Defect Solutions for Silicon Crystal Growth and Wafer ProcessingOn the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single CrystalsDiffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect BehaviorThe Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich ConditionsModeling of Impurity Transport and Point Defect Formation during Cz Si Crystal GrowthEffect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial WafersCarbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption StudiesInfrared Absorption Analysis of Nitrogen in Czochralski SiliconRole of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon WafersOptical Properties of Oxygen Agglomerates in SiliconPositron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like DefectsSilicon Isotope Shifts of the 648-cm-1 Infrared Absorption Line of Oxygen in SiliconThermal Donors in Silicon Implanted with Rare Earth ImpuritiesInterfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated SiliconVibrational Modes of Oxygen Dimers in GermaniumOxygen Precipitation in Silicon Doped with TinHydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted SiliconElastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in SiliconImpact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA ProcessingHydrogen Interaction with Transition Metals in Silicon, Studied by Electron Paramagnetic ResonanceRaman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski SiliconNitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical EtchingHydrogen-Related Defects in High-Resistivity SiliconInfra Red Absorption by Hydrogen-Passivated Cracks in SiliconAtomistic Study of Boron Clustering in SiliconSelf-Interstitial Kinetics and Transient Phenomena in Si CrystalsDependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted DoseInterstitial Diffusion Influence upon Two-Dimensional Boron ProfilesIncorporation, Diffusion and Agglomeration of Carbon in SiliconSuppression of Boron Transient Enhanced Diffusion by C TrappingThermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and ModellingRoom Temperature Point Defect Migration in Crystalline SiElectrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient SpectroscopyThe Effect of Intrinsic Point Defects upon Dislocation Motion in SiliconStress-Induced Redistribution of Point Defects in Silicon Device StructuresCharacterization of Interstitial-Related Bulk Defects in p- Silicon Substrates by Epitaxial DepositionMonitoring of Defects in Thermal Oxides during Electrical StressFormation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy IonsA Study of the Conversion of the VO to the VO2 Defect in Heat-Treated Silicon under StressPassivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced DefectsImpact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated SiliconHelium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?Void Shrinkage during Thermal Oxidation of SiliconGettering Induced by Helium Implantation: Application to a DeviceDefects Created by Helium Implantation at Different Temperatures in SiliconDamage Evolution in Helium-Hydrogen Co-Implanted (100) SiliconGold Gettering by H+ or He++ Ion Implantation Induced Cavities and Defects in Cz Silicon WafersInfluence of Depth in Helium Desorption from Cavities Induced by 3He Implantation in SiliconDopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and PhosphorusHydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski SiliconPrecipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering SitesIron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p+ Epitaxial WafersCopper-Defect and Copper-Impurity Interactions in SiliconEfficiency of Intrinsic Gettering for Copper in SiliconNickel Gettering in Silicon: Role of OxygenElectrical Activity of Dislocations in Si Decorated by NiComparison of Nickel and Iron Gettering in Cz Silicon WafersRecombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-SectionsInternal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing MetalsThe Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18?m Advanced CMOS Logic ProcessApplication of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si WafersDefect Engineering and Prevention of Impurity Gettering at RP/2 in Ion-Implanted SiliconGettering Technology Based on Porous SiliconPlatinum Silicide Precipitate Formation During Phosphorus Diffusion Gettering in SiliconImpact of a Cooling Process on the Dopant Activity of Platinum in SiliconRadiation Defects and Carrier Lifetime in Tin-Doped n-Type SiliconUltra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above BreakdownRadiation-Induced Electronic Defect Levels in High-Resistivity Si Detectorsp-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon SubstratesRadiation Damage in MOS Structures, Irradiated with High-Energy Heavy Ions and Fast Neutrons, with Regard to Charge DLTS and C-V MeasurementsStudy of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge ModelRadiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron IrradiationImpact of High-Energy Particle Irradiation on Polycrystalline Silicon FilmsProton Irradiation Effects on Standard and Oxygenated Silicon DiodesExistence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX WafersHydrogen-Related Phenomena in SOI Fabricated by Using H+-Ion ImplantationHydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen SlicingProperties of Silicon Film in a Silicon-on-Glass StructureStructural and Photoluminescence Properties of H+ Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen SlicingCharge Relaxation at Oxygen-Enriched Silicon Grain BoundariesCharacterization of SiC Grown on Si(111) by Supersonic C60 BeamsEffects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVDCavities in He-Implanted SiCStudy of Relaxed Si0.7Ge0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman SpectroscopyOn the Properties of Divacancies in Si1-xGexKinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si1-xGex Structures Grown by Molecular Beam Epitaxy with Combined SourcesInfluence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si1-xGex AlloyDefect-Related Current Instabilities in InAs/GaAs and AlGaAs/GaAs Structures?Segregation of Mg Implanted into InAs: Influence of the Internal Elastic StressesDefects in CdTe Induced by Powerful Laser RadiationPhonon-Plasmon Interaction in Tunnelling GaAs/AlAs Superlattices Grown on (311) and (100) SubstratesRadiation-Stimulated Ordering Effect in CdS CrystalsThe Laser-Stimulated Modification of the Surfaces of Polycrystalline CdTe LayersElectroluminescence of Si Quantum Dots in MOS StructuresBlue-Green Photoluminescence from Silicon Dioxide Films Containing Ge+ Nanocrystals Formed under Conditions of High Hydrostatic Pressure AnnealingSilicon Nanoclusters in Thermal Oxide Films on SiliconLuminescence from Si Nanocrystals and Er3+ Ions Embedded in Resonant CavitiesTemporal Characteristics of the Optical Storage Effect in Si:ErEffect of Selective Doping on Photo- and Electroluminescence Efficiency in Si:Er StructuresThe Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron SputteringDefect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth IonsExcitation Cross-Section of Erbium in Semiconductor Matrices under Optical PumpingSpectroscopic Characterisation of Erbium Impurity in Crystalline SiliconNanocrystal MOS Memories Obtained by LPCVD Deposition of Si NanograinsMemory Effects in Single-Electron NanostructuresNanocrystal MOS with Silicon-Rich OxideSelf-Orientation of Silicon Nanocrystals Created under Pulse Laser Impact in Stressed a-Si:H Films on Glass SubstratesNucleation of Nanostructures from Surface Defects on SiliconCrystalline Silicon for Solar CellsMeasurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar CellsOxygen Annealing Behavior in Multicrystalline SiliconThree-Dimensional Emitter Based on Locally Enhanced Diffusion (TREBLE) Structure: Modeling and FormationEffective Gettering Mechanisms in Solar Multicrystalline MaterialsStrain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron DiffractionGate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor StructuresLock-In IR-Thermography ? A Novel Tool for Material and Device CharacterizationCharacterisation of Surface and Near-Surface Regions in High-Purity Cz SiA Technique for Delineating Defects in SiliconSEM Vision Periodic Defect Review and Characterization after Inter-Metal Dielectric DepositionEllipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical ModelEvaluation of Effective Carrier Lifetime in Epitaxial Silicon LayersSpatial Distribution of Strain and Phases in Si Nano-Indentation Analysed by Raman MappingStructure and Stability of Thin Praseodymium Oxide Layers on Si(001)Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon1D-ACAR Studies of As-Grown Impurity Centers in SiliconCharacterization of Interfacial States at Silicon BicrystalsMinority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current