Richter / Kittler / Claeys Gettering and Defect Engineering in Semiconductor Technology VI

Erscheinungsjahr 1995
ISBN: 978-3-0357-0661-1
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 640 Seiten

At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.

Autoren/Hrsg.

Richter, Hans

Kittler, Martin

Claeys, Cor

Inhaltsverzeichnis

Preface
Trends and Challenges for Advanced Silicon Technologies
Needs of Low Thermal Budget Processing in SiGe Technology
History and Future of Semiconductor Wafer Bonding
Building the Electron Superhighway: Back-End Processing and Simulation
Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon
Silicon Materials and Metrology: Critical Concepts for Optimal IC Performance in the Gigabit Era
Expected Limits for Manufacturing Very Large Silicon Wafers
Diameter Effects on Grown-In Defects in CZ Crystal Growth
Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices
Multicrystalline Silicon for Solar Cells
Room Temperature UHV Silicon Direct Bonding
External Gettering for Multicrystalline Silicon Wafers
Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications
Gettering of Au in Heat Treated Si/SiGe/Si Structures
Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers
Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
Interactions between Dopants and End-of-Range Defects in Silicon
Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation
SiC Buried Layer Formation Induced by Ion Implantation
The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources
Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation
Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
Point Defects in Semiconductors - Then and Now
Oxygen Aggregation Phenomena in Silicon
New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics
Hydrogen Passivation of Double Donors in Silicon
Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si
New Infrared Bands in Neutron-Irradiated Si
Iron Group Impurities in Semiconducting Iron Disilicide
Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study
Influence of Point Defects on Defect Formation in Si:Er
The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center
Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures
DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation
Structural and Electrical Properties of NiSi2 Particles in Silicon
Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation
Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon
A Study of Defects Generated by BF2+ Implantation in Silicon Crystals and Their Annealing
Surface Damage Induced by Reactive Ion Etching in n- Type Silicon
The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts
The Impact of Fe and Cu Contamination in the 1012 at/cm2 Range on the Performance of Junction Diodes
Low-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si Devices
Correlation between Dislocations and Electron Transport Properties in Si/SiGe
Dislocation Related Electroluminescence at Room Temperature in Plastically Deformed Silicon
Investigation of the Dislocation Motion in the Bulk SiGe Crystals
Ion Beam Sputter Deposited Si0.8Ge0.2Epilayers: Lattice Defects and Surface Topology
GaAIAs Lattice Parameter Dependence on Free Electron Concentration
Relation between Structural and Carrier Recombination Properties in As-Rich GaAs
Investigation of Microdefects in Multicrystalline Silicon for Photovoltaic Applications
Analysis of S=3 and S=9 Twin Boundaries in Three-Crystal Silicon Ingots
Band Structure Engineering in Si-Ge Structures
Diffusion Effects and Luminescence in Thin SiGe/Si Layers
Investigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVD
The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures
Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys
Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas
Composition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and Diffusion
The Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic Pressure
Critical Points of Strained Si1-yCy Layers on Si(001)
Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD
Elastic Relaxation of Pseudomorphic Strain in Quantum Dots
Electrical Activity of Misfit Dislocations in GaAsSb/GaAs Heterojunctions
Twin Formation during Epitaxial Growth of InP on Si
Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates
Determination of Interface Structure and Bonding by Z-Contrast STEM
Tomographic Atom Probe: A New Tool for Nanoscale Characterisation
PHOTO-EDSR in Plastically Deformed p-Si
Cyclotron Resonance in Heavily Doped Silicon Quantum Wells
TEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si1-xGex Layers Grown with Molecular Beam Epitaxy
Measurements of Diffusion Length in Si-SiGe Structures
Determination of Subgap-Asorption in µc-Si:H Films by CPM
An Analysis of Residual Strain in Dry Etched Semiconductor Nanostructures