Gettering and Defect Engineering in Semiconductor Technology VI

Erscheinungsjahr 1995
ISBN: 978-3-03859-977-7
Verlag: Trans Tech Publications

Sonstiges, Englisch, 640 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.

Autoren/Hrsg.

Richter, Hans

Kittler, Martin

Claeys, Cor

Inhaltsverzeichnis

Trends and Challenges for Advanced Silicon TechnologiesNeeds of Low Thermal Budget Processing in SiGe TechnologyHistory and Future of Semiconductor Wafer BondingBuilding the Electron Superhighway: Back-End Processing and SimulationRole of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of SiliconSilicon Materials and Metrology: Critical Concepts for Optimal IC Performance in the Gigabit EraExpected Limits for Manufacturing Very Large Silicon WafersDiameter Effects on Grown-In Defects in CZ Crystal GrowthSilicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic DevicesMulticrystalline Silicon for Solar CellsRoom Temperature UHV Silicon Direct BondingExternal Gettering for Multicrystalline Silicon WafersGettering of Transition Metals in Multicrystalline Silicon for Photovoltaic ApplicationsGettering of Au in Heat Treated Si/SiGe/Si StructuresGettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon WafersDefect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature ProcessingInteractions between Dopants and End-of-Range Defects in SiliconBehaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon OxidationSiC Buried Layer Formation Induced by Ion ImplantationThe Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light SourcesCritical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical EvaluationInfrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal TreatmentsPoint Defects in Semiconductors - Then and NowOxygen Aggregation Phenomena in SiliconNew Donors in Heat-Treated Cz-Si, Their Components and Formation KineticsHydrogen Passivation of Double Donors in SiliconPhosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated SiNew Infrared Bands in Neutron-Irradiated SiIron Group Impurities in Semiconducting Iron DisilicideFermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450?C - 540?C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance StudyInfluence of Point Defects on Defect Formation in Si:ErThe Si:Er Crystal: Model and Excitation Mechanism of the Er-O CenterPoint Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping StructuresDX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and ImpuritiesDRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature AnnealingCopper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal OxidationStructural and Electrical Properties of NiSi2 Particles in SiliconContrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an ExplanationCharacterisation of High-Energy Proton Irradiation Induced Recombination Centers in SiliconA Study of Defects Generated by BF2+ Implantation in Silicon Crystals and Their AnnealingSurface Damage Induced by Reactive Ion Etching in n- Type SiliconThe Effect of Metallization Induced Defects on Metal-Semiconductor ContactsThe Impact of Fe and Cu Contamination in the 1012 at/cm2 Range on the Performance of Junction DiodesLow-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si DevicesCorrelation between Dislocations and Electron Transport Properties in Si/SiGeDislocation Related Electroluminescence at Room Temperature in Plastically Deformed SiliconInvestigation of the Dislocation Motion in the Bulk SiGe CrystalsIon Beam Sputter Deposited Si0.8Ge0.2Epilayers: Lattice Defects and Surface TopologyGaAIAs Lattice Parameter Dependence on Free Electron ConcentrationRelation between Structural and Carrier Recombination Properties in As-Rich GaAsInvestigation of Microdefects in Multicrystalline Silicon for Photovoltaic ApplicationsAnalysis of S=3 and S=9 Twin Boundaries in Three-Crystal Silicon IngotsBand Structure Engineering in Si-Ge StructuresDiffusion Effects and Luminescence in Thin SiGe/Si LayersInvestigation of the Substrate / Epitaxial Interface of Si/Si1-xGexGrown by LPCVDThe Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well StructuresMechanisms of Dislocation Generation in Heterostructures Based on SiGe AlloysElastic and Plastic Stress Relaxation in Stripes and Circular MesasComposition Dependence of Hardness and Elastic Modulus in Si-Ge Measured by Nanoindentation - Possible Consequences for Elasto-Plastic Relaxation and DiffusionThe Relaxation and Diffusion Behaviour of Strained Si1-xGex Layers on Si Substrates at High Temperature under Hydrostatic PressureCritical Points of Strained Si1-yCy Layers on Si(001)Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVDElastic Relaxation of Pseudomorphic Strain in Quantum DotsElectrical Activity of Misfit Dislocations in GaAsSb/GaAs HeterojunctionsTwin Formation during Epitaxial Growth of InP on SiInterface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal SubstratesDetermination of Interface Structure and Bonding by Z-Contrast STEMTomographic Atom Probe: A New Tool for Nanoscale CharacterisationPHOTO-EDSR in Plastically Deformed p-SiCyclotron Resonance in Heavily Doped Silicon Quantum WellsTEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si1-xGex Layers Grown with Molecular Beam EpitaxyMeasurements of Diffusion Length in Si-SiGe StructuresDetermination of Subgap-Asorption in ?c-Si:H Films by CPMAn Analysis of Residual Strain in Dry Etched Semiconductor Nanostructures