Richter / Kittler Gettering and Defect Engineering in Semiconductor Technology X

Erscheinungsjahr 2003
ISBN: 978-3-0357-0724-3
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 704 Seiten

Volume is indexed by Thomson Reuters CPCI-S (WoS).This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.

Autoren/Hrsg.

Richter, Hans

Kittler, Martin

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Preface
Smart-Cut Process for Ultrathin SOI Wafers Manufacturing
Investigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their Suppression
Defect Formation in Heavily As-Doped Cz Si
Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions
Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments
Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth
Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation
Optimized Parameters for Modeling Oxygen Nucleation in Silicon
Oxygen Ion Bombardment for Local Oxide Formation in Si
Nitrogen Diffusion and Interaction with Oxygen in Si
Structure and Electronic Properties of Nitrogen Defects in Silicon
Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics
Processing and Characterization of 300 mm Argon-Annealed Wafers
Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon
Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors
Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability
Influence of Hydrogen on the Formation of Interstitial Agglomerates in Silicon
High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon
Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers
Casting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-Substrate
Silicon Ribbons for Solar Cells
Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length
Carbon-Induced Twinning in Multicrystalline Silicon
Light-Induced Degradation in Crystalline Silicon Solar Cells
Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations
Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells
Evaluation of Silicon Sheet Film Growth and Wafer Processing via Structural, Chemical and Electrical Diagnostics
The Effect of Grain Orientations on the Efficiency of Multicrystalline Solar Cells
Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells
Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon
Influence of High-Temperature Processes on Multicrystalline Silicon
Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene
Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors
Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)
Extended Defects in Silicon: an Old and New Story
Luminescence of Dislocations and Oxide Precipitates in Si
Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes
Luminescence of Silicon Implanted with Phosphorus
Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices
Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment
Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium
Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures
Doping Effect of Helium Induced Nanocavities in Silicon
LACBED Investigations of High Energy Helium Implanted into 4H-SiC
Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon
Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon
Two Dimensional Interstitial Diffusion in Mesoscopic Structures
Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon
A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon
Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers
High Temperature Electron Irradiation Effects in InGaAs Photodiodes
Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range
Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium
Radiation Hardening of Silicon for Detectors by Preliminary Irradiation
Computer Modelling of SiO2 Precipitation in Cz-Si Doped with Nitrogen
First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces
Dislocation-Impurity Interaction in Silicon
Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon
Dislocation Generation in Device Fabrication Process
Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon
Electrical and Optical Properties of Dislocations Generated under Pure Conditions
Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors
Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon
Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods
Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?
Measurement of Nitrogen Concentration in Cz Silicon Crystals
Gold Diffusion as a Tool for Defect Characterization in Si
Infrared Transmission Investigations of Rod - Like Defects in Multicrystalline Silicon
Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal
Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy
Investigation of Semiconductors by Nanoindentation
Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation
Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities
Gettering Strategies for SOI Wafers
Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon
Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation
Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon
Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing
Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon
Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency
Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering
Internal Gettering Efficiency in p/p+ and p/p- Silicon Epistructures
Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level
Atomically Controlled Technology for Future Si-Based Devices
Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon
Application-Specific Wafer Reclaim
Coulomb Blockade in Silicon Nanocrystals Embedded in SiO2 Matrix
Self-Assembled Surface Patterning and Structural Modification upon Femtosecond Laser Processing of Crystalline Silicon
Local Dielectric Degradation of Cu-Contaminated SiO2 Thin Films
Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System
Hafnium Oxide on Silicon: A Non-Destructive Characterization of the Interfacial Layer
Surface Tension Variation of Silicon Melts with Nitrogen Addition
Prospects for New Wafer Types and Materials in Semiconductor Technology and Factors for their Successful Introduction