Sonstiges, Englisch, 704 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 704 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-0357-0940-7
Verlag: Trans Tech Publications
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
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Smart-Cut Process for Ultrathin SOI Wafers ManufacturingInvestigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their SuppressionDefect Formation in Heavily As-Doped Cz SiRecrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen IonsLaser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser TreatmentsPredicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low TemperaturesEffect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ SiInvestigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster ApproximationOptimized Parameters for Modeling Oxygen Nucleation in SiliconOxygen Ion Bombardment for Local Oxide Formation in SiNitrogen Diffusion and Interaction with Oxygen in SiStructure and Electronic Properties of Nitrogen Defects in SiliconCharacterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular MechanicsProcessing and Characterization of 300 mm Argon-Annealed WafersThermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski SiliconNitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors Vibrational Lifetimes of Hydrogen and Silicon MOSFET ReliabilityInfluence of Hydrogen on the Formation of Interstitial Agglomerates in SiliconHigh Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon WafersCasting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-SubstrateSilicon Ribbons for Solar CellsMetal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length Carbon-Induced Twinning in Multicrystalline SiliconLight-Induced Degradation in Crystalline Silicon Solar CellsEstimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on DislocationsMinority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar CellsEvaluation of Silicon Sheet Film Growth and Wafer Processing via Structural, Chemical and Electrical DiagnosticsThe Effect of Grain Orientations on the Efficiency of Multicrystalline Solar CellsUnderstanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar CellsCarrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline SiliconInfluence of High-Temperature Processes on Multicrystalline SiliconGrowth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using EthyleneImpact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar TransistorsLong-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)Extended Defects in Silicon: an Old and New StoryLuminescence of Dislocations and Oxide Precipitates in SiInfluence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting DiodesLuminescence of Silicon Implanted with PhosphorusProperties of Cavities Induced by Helium Implantation in Silicon and their Applications to DevicesModification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma TreatmentEffect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and HeliumDefects Created by Multi-Energy He Implantation of Silicon at High TemperaturesDoping Effect of Helium Induced Nanocavities in SiliconLACBED Investigations of High Energy Helium Implanted into 4H-SiCEffects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in SiliconEffect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / SiliconTwo Dimensional Interstitial Diffusion in Mesoscopic StructuresKinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz SiliconInfluence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon WafersHigh Temperature Electron Irradiation Effects in InGaAs PhotodiodesAccurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV RangeInterstitial-Related Radiation Defects in Silicon Doped with Tin and GermaniumRadiation Hardening of Silicon for Detectors by Preliminary IrradiationComputer Modelling of SiO2 Precipitation in Cz-Si Doped with NitrogenFirst Principles Simulations of Extended Defects at Cubic SiC Surfaces and InterfacesDislocation-Impurity Interaction in SiliconInfluence of Magnetic Field on Critical Stress and Mobility of Dislocations in SiliconDislocation Generation in Device Fabrication Process Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in SiliconElectrical and Optical Properties of Dislocations Generated under Pure ConditionsEffect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic SemiconductorsInfluence of Nitrogen on Dislocation Mobility in Czochralski SiliconPrecise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different MethodsCapacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?Measurement of Nitrogen Concentration in Cz Silicon CrystalsGold Diffusion as a Tool for Defect Characterization in SiInfrared Transmission Investigations of Rod - Like Defects in Multicrystalline SiliconAtomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single CrystalResidual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman SpectroscopyInvestigation of Semiconductors by NanoindentationPhosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond SegregationTuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal ImpuritiesGettering Strategies for SOI WafersInteraction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in SiliconControlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-ImplantationGettering of Impurities in Hydrogen Implanted Nitrogen-Doped SiliconGettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum AnnealingRe-Dissolution of Gettered Iron Impurities in Czochralski-Grown SiliconSimulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering EfficiencyIon Beam Induced Excess Vacancies in Si and SiGe and Related Cu GetteringInternal Gettering Efficiency in p/p+ and p/p- Silicon EpistructuresDopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping LevelAtomically Controlled Technology for Future Si-Based DevicesEpitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on SiliconApplication-Specific Wafer ReclaimCoulomb Blockade in Silicon Nanocrystals Embedded in SiO2 MatrixSelf-Assembled Surface Patterning and Structural Modification upon Femtosecond Laser Processing of Crystalline SiliconLocal Dielectric Degradation of Cu-Contaminated SiO2 Thin FilmsProcess-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection SystemHafnium Oxide on Silicon: A Non-Destructive Characterization of the Interfacial LayerSurface Tension Variation of Silicon Melts with Nitrogen AdditionProspects for New Wafer Types and Materials in Semiconductor Technology and Factors for their Successful Introduction
