Sonstiges, Englisch, Band Volume 858, 1264 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
ICSCRM 2015
Sonstiges, Englisch, Band Volume 858, 1264 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
ISBN: 978-3-0357-2042-6
Verlag: Trans Tech Publications
The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.
The papers are grouped as follows:
Chapter 1: SiC Growth
Chapter 2: SiC Theory and Characterization
Chapter 3: SiC Processing
Chapter 4: SiC Devices
Chapter 5: Related Materials
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Bulk Growth of Large Area SiC CrystalsLarge Area 4H SiC Products for Power Electronic DevicesUsing Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT MethodTrials of Solution Growth of Dislocation-Free 4H-SiC Bulk CrystalsDeveloping Technologies of SiC Gas Source Growth MethodLimitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source MethodHigh Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 ?CEffect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC150 mm 4H-SiC Substrate with Low Defect DensityA Competitive Lattice Model Monte Carlo Method for Simulation of Competitive Growth of Different Polytypes in SiC Single CrystalApplication of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth ConditionsCharacterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC CrystalsSpatial Distribution of Carrier Concentration in 4H-Si? Crystal Grown by Solution MethodDoping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source MethodEffect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC CrystalsEffects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation MethodEvolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single CrystalsGrowth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-DopingExperimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si SolventsInfluence of Impurities in SiC Powder on High Quality SiC Crystal GrowthPhysical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD TemplatesStress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic ModuliStructural Transformation from TSDs to Frank-Type Stacking Faults by Giant Bunched Steps in PVT-Grown 4H-SiC Single CrystalsSublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) CruciblesSynchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC WafersTemperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC CrystalsThe Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT MethodAdvances in Fast Epitaxial Growth of 4H-SiC and Defect ReductionLong Charge Carrier Lifetime in As-Grown 4H-SiC EpilayerHomoepitaxial Chemical Vapor Deposition of up to 150 ?m Thick 4H-SiC Epilayers in a 10?100 mm Batch ReactorImprovement of 4H-SiC Epitaxial Layers Grown on 2o Offcut Si-Face Substratesp-Type Doping of 4H- and 3C-SiC Epitaxial Layers with AluminumStructural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical ApplicationsStacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges3C-SiC Epitaxy on Deeply Patterned Si(111) SubstratesOptimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond SubstrateVoids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer4H-SiC(0001) Surface Faceting during Interaction with Liquid SiAdvances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power DevicesAnalysis and Reduction of Stacking Faults in Fast Epitaxial GrowthDesign of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial ParametersEffect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench FillingEffects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC InterfaceElimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary ReactorFormation and Reduction of Large Growth Pits on 100 mm 4? 4H-SiCHydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power ApplicationImprovement on 150 mm 4H-SiC Epitaxial Wafer QualityOptimization of VLS Growth Process for 4H-SiC P/N JunctionsSmooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4? Off-Cut SubstratesStructure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier DiodesStudy of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics MethodStudy of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC SubstratesThe Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiCMitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on SusceptorDetermination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiCDensity-Functional Calculation of Carbon-Interstitial Energies in a 4H-SiC(0001)-SiO2 InterfaceIdentifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical StudyInvestigation of Mo Defects in 4H-SiC by Means of Density Functional TheoryMagnetic Field Sensing with Atomic Scale Defects in SiC DevicesPhotoluminescence of 10H-SiCMapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using ?-XRDHeteropolytypic SuperlatticesHigh Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiCOptical Nuclear Spin Polarization of Divacancies in SiCBoron-Implanted 3C-SiC for Intermediate Band Solar CellsCorrelation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray TopographyDoping of 4H-SiC with Group IV ElementsDeep Level Characterization of 5 MeV Proton Irradiated SiC PiN DiodesEngineering Single Defects in Silicon Carbide Bulk, Nanostructures and DevicesESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiCFirst Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiCFluorescent P-Type 4H-SiC Grown by PVT MethodFormation and Annihilation of Carbon Vacancies in 4H-SiCLifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-ShiftModelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type EpilayersRecombination Processes in 4H-SiC pn StructuresStudy of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray ScatteringSurface Voltage and ?PCD Mapping of Defect in Epitaxial SiCThermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance SpectroscopyThree-Dimensional Imaging of Extended Defects in 4H-SiCPost-Growth Micropipe Formation in 4H-SiCObservation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron MicroscopyMapping of Threading Screw Dislocations in 4H n-Type SiC WafersElectrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents MeasurementsEffects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward VoltageDislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-VectorsDislocation Characterization in 4H-SiC CrystalsCross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiCCharacterization of Threading Screw Dislocations of Burgers Vectors with A-Components in 4H-SiCCharacterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL ImagingBipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by PhotoluminescenceControlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature TreatmentIon Implantation Defects in 4H-SiC DIMOSFETAn Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics SimulationsA Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness FluctuationAccuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance MethodAnalysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C?V MeasurementCathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation AnnealingCharacterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)Dipole Type Behavior of NO Grown Oxides on 4H?SiCImportance of SiC Stacking to Interlayer States at the SiC/SiO2 InterfaceMeasurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETsMechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation ? A First Principles StudyNondestructive and Local Evaluation of SiO2/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric MicroscopyOn the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETsPragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall MeasurementsThreshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature StressFailure Analysis of a SiC MOS Capacitor with a Poly-Si Gate ElectrodeUltra-Fast SiC Wafer Surface Roughness MappingPhotoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 FilmsJunction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant ImagingConcentration Profile Simulation of SiC/Si HeterostructuresDevelopment of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface DiffractionAccurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CVA Surprising Result: ?Bulk? SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs1950?C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing TimeAl Doping from Laser Irradiated Al Film Deposited on 4H-SiCAlternative Highly Homogenous Drift Layer Doping for 650 V SiC DevicesHigh Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet AnnealingSilicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser AnnealWarpage Structure of 4H-SiC after Implantation and Annealing ProcessesLow Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser AnnealingThermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 PhaseOhmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300?C in AirOhmic Contact for Silicon Carbide by Carbon NanotubesLow Thermal Budget Ohmic Contact Formation by Laser AnnealImpact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic ContactsAn Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing ApplicationsThreshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide TrapsRelationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic ResonanceNegative Bias Temperature Instability of SiC MOSFETImpact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in Si? MOS DevicesQuantified Density of Active near Interface Oxide Traps in 4H-SiC MOS CapacitorsImpact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETsTime Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS CapacitorsTime Dependent Dielectric Breakdown in High Quality SiC MOS CapacitorsMicroscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic ResonanceHigh Temperature Nitridation of 4H-SiC MOSFETsImprovement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-TemperaturesAnalytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devicesEffect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiCSystematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface TreatmentInfluence of Oxide Processing on the Defects at the SiC-SiO2 Interface Measured by Electrically Detected Magnetic ResonanceInvestigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing TreatmentHigh Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O AtmosphereIrradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of RobustnessX-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing ConditionsProcessing and Characterization of MOS Capacitors Fabricated on 2?-Off Axis 4H-SiC EpilayersImproved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/SiHigh-Mobility SiC MOSFETs with Alkaline Earth Interface PassivationAlkali Metal Re-Distribution after Oxidation of 4H-SiCFlatband Voltage Shift Depending on SiO2/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO2 Stacked Gate DielectricsAtomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiCInvestigation of Interface State Density with Varied SiO2 Thickness in La2O3/SiO2/4H-SiC MOS CapacitorsInterface Analysis of P-Type 4H-SiC/Al2O3 Using Synchrotron-Based XPSPassivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 InterfacesImpact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2OConduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O3C-SiC Microdisks for Visible PhotonicsEtching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride GasDevelopment of ?Si-Vapor Etching? and ?Si Vapor Ambient Anneal? in TaC/Ta Composite MaterialsNovel 3C-SiC Microstructure for MEMS ApplicationsStudy of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction StructuresDesign of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC DevicesModeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature RangeOptimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact IonizationAnomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky DiodesEpitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier DiodesComparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated DevicesElectrical Performance of 4H-SiC Based Drift Step Recovery DiodesLow Resistivity SiC Devices with a Drift Layer Optimized by Variational ApproachA New Type of Single Carrier Conduction Rectifier on SiCForward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area ComponentsSilicon Carbide Schottky Rectifiers with Improved Avalanche RuggednessOptimization of 1700V 4H-SiC JBS Diode ParametersHigh-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiCHigh Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky DiodesWide Band Gap Semiconductor Technology for Energy EfficiencyAdvanced SiC Power MOSFETs Manufactured on 150mm SiC WafersShort Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETsRepetitive Short-Circuit Tests on SiC VMOS DevicesComparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFETPotential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETsAnalytical Description of the Input Capacitance of 4H-SiC DMOSFET?s in Presence of Oxide-Semiconductor Interface TrapsCharacteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell StructureComparison of Test Methods for Proper Characterization of VT in SiC MOSFETsThe Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias TestsSi/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device SimulationTrench-MOSFETs on 4H-SiCSiC Power Switches Evaluation for Space Applications RequirementsEffect of Electron Irradiation on 1700V 4H-SiC MOSFET CharacteristicsChange in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High TemperatureCharacterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray RadiationGamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETsAvalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETsHigh Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and RobustnessUsing SiC MOSFET?s Full Potential ? Switching Faster than 200 kV/?sElectrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380?CDesign and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTsReadiness of SiC MOSFETs for Aerospace and Industrial ApplicationsExperimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 ?C to 500 ?CProcessing and Prolonged 500 ?C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal InterconnectModelling of 4H-SiC VJFETs with Self-Aligned ContactsConduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)A 500 ?C Monolithic SiC BJT Latched ComparatorDesign Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped ChannelCurrent Gain Stability of SiC Junction Transistors Subjected to Long-Duration DC and Pulsed Current StressComparison of Energy Losses in High-Current 1700 V Switches6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift LayerAn Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTsElectro-Thermal TCAD Model for 22 kV Silicon Carbide IGBTs4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing SubstratesGeometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mOcm2 and High Avalanche Withstanding CapabilityImproved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation?Epitaxial MOSFETs with Low On-Resistance and RobustnessSilicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion ImplantationModification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power DevicesVertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC ApplicationsHigh Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings TerminationNOx Sensing with SiC Field Effect TransistorsExploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect TransistorsComparison of Bottom-Up and Top-Down 3C-SiC NWFETsDNA Detection Using SiC Nanowire Based TransistorSiC for Biomedical ApplicationsNi2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light DetectionLarge Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium ImplantationLarge Area Silicon Carbide Photodiode, and Monolithic Readout Design and FabricationSolar Driven Energy Conversion Applications Based on 3C-SiCIon Implanted 4H-SiC UV Pin-Diodes for Solar Radiation Detection ? Simulation and CharacterizationStructural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical GainHistory and Recent Developments of Packaging Technology for SiC Power DevicesReliability Evaluation of SiC Power Device Package Used Heat-Resistant Molding Plastic by Power Cycle TestStudies on Floating Contact Press-Pack Diodes Surge Current CapabilityImpact of Package Parasitics on Switching PerformanceInvestigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and Molybdenum Substrate and between Molybdenum Substrate and Bulk CopperDevelopment of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature RangeSPICE Modeling of Advanced Silicon Carbide High Temperature Integrated CircuitsDevelopment of a PSpice Model for SiC MOSFET Power ModulesHigh-Temperature Transient Thermal Analysis for SiC Power ModulesUtilization of SiC MOSFETs in Voltage Source Inverter of Inductive Power Transfer Systems for Enduring Capacitive LoadsApplication of 25mO SiC MOSFETs in a 10kVA Grid-Connected AC/DC ConverterA Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGTCascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High TransconductanceNewly Developed Switching Analysis Method for 3.3 kV 400 a Full SiC ModuleNovel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC3D Integration of Si-Based Peltier Device onto 4H-SiC Power DeviceEvidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal InterconnectAtomistic Simulations and Interfacial Morphology of Graphene Grown on SiC(0001) and SiC(000-1) SubstratesThe Interaction between Graphene and the SiC Substrate: Ab Initio Calculations for Polar and Nonpolar SurfacesInterfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)Wafer-Scale Graphene on 4-Inch SiCHot Electron Transistors Based on Graphene/AlGaN/GaN Vertical HeterostructuresAmplification in Graphene Nanoribbon JunctionsModified Epitaxial Graphene on SiC for Extremely Sensitive and Selective Gas SensorsHighly Sensitive NO2 Graphene Sensor Made on SiC Grown in Ta CrucibleGraphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 ?mAbnormal Raman Spectral Variation with Excitation Wavelength in Boron-Doped Single-Crystalline DiamondDevelopment of GaN-Based Gate-Injection Transistors and its Power Switching ApplicationMetal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTsTri-Gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-SubstratesTrapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN HeterostructuresVisualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy15 eV Protons Irradiation of the GaN Schottky DiodesStudy and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element SimulationsGrowth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN Using Un-Doped GaN InterlayerHVPE GaN Growth on 4H SiC and Die DicingDesign and Optimization of AlGaN Solar-Blind Double Heterojunction Ultraviolet PhototransistorAlGaN/SiC Heterojunction Ultraviolet PhotodiodesHigh-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent
