Sangster / Fisher | Formation of Silicon Nitride from the 19th to the 21st Century | Buch | 978-3-03835-994-4 | sack.de

Buch, Englisch, 1016 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1800 g

Sangster / Fisher

Formation of Silicon Nitride from the 19th to the 21st Century

2nd Edition

Buch, Englisch, 1016 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1800 g

ISBN: 978-3-03835-994-4
Verlag: Trans Tech Publications


The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all ) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to closely related matters. This revised second edition summarizes and integrates what is recorded in the world literature from 1857through 2014 as being known about the formation of silicon nitride – Si3N4 – and itsclose relatives. The book is the key to all that has been learned, over the past 150 years, about how silicon nitride comes to exist: in nature, in the laboratory or in the factory and in many reaction systems; together with how it is used in ceramics, electronic films, optical coatings and many other ways (including an introduction to closely related substances). It will aid the researcher in designing new projects, the supervisor in briefing new employees, the salesman in working with new customers, the patent attorney in assessing patents and the professor in designing graduate course assignments. This comprehensive reference gathers information published on the chemistry of silicon nitride and its products, uses, and markets. Separate chapters overview the manufacture of silicon nitride powder, the production of silicon nitride ceramics via the reaction bonding process, the intrinsic reactions between crystalline silicon surfaces and N2 for silicon wafers, nitridation of Si-O based materials, and chemical vapor deposition of Si-H compounds.
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Weitere Infos & Material


Preface
Part A: In the Beginning
Part B: Technical Context of Silicon Nitride Formation
Part C: Si3N4 Products, Uses and Markets
Part D: Si3N4 by Reaction of Si(cr) Surfaces and N-Species
Part E: Si3N4 Powder Formation from Si(Powder)/N2(g)
Part F: Fabrication of Reaction Bonded Silicon Nitride
Part G: Si3N4 from Si/N2 under Vigorous Conditions
Part H: Si3N4 Formation by Reaction of Si with N-Compounds
Part I´: Si3N4 by Nitridation of Si-O Based Materials
Part J: Si3N4 Formation from Si-N Based Materials
Part K: Comparative Overview and Summary of Si3N4 CVD
Part L: Si3N4 by CVD Nitridation of Si-H Compounds
Part M: Si3N4 by CVD Nitridation of Si Halides and Halosilanes
Part N: Si3N4 Formation in Si-C-N Systems
Part O: Si3N4 Formation in Si-N-X Systems, X = B, P, S, Fe, other


Eds. Raymond C. Sangster and David J. Fisher


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