Buch, Englisch, 560 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 720 g
Buch, Englisch, 560 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 720 g
ISBN: 978-0-12-821084-0
Verlag: William Andrew Publishing
Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Leistungselektronik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Technische Thermodynamik
Weitere Infos & Material
1. Heating issues in wide-bandgap semiconductor devices 2. First principles thermal transport in GaN and related materials 3. Heat transport in polycrystalline diamond from the meso to the nano scale 4. Understanding Thermal Transport across Interfaces 5. Upper limits to thermal conductance across gallium nitride interfaces: predictions and measurements 6. AlGaN/GaN HEMT Device Physics and Electro-Thermal Modeling 7. Modeling of thermal phenomena in GaN devices 8. Device-level modeling and simulation of AlGaN/GaN HEMTs 9. Gate Resistance Thermometry: an electrical thermal characterization technique 10. Thermal characteristics of superlattice castellated FETs 11. The transient Thermoreflectance Approach for high-resolution temperature mapping of GaN devices 12. Fundamentals of CTE-matched QST substrate technology 13. Reduced-Stress Nanocrystalline Diamond for Heat Spreading in Electronic Devices 14. GaN-on-diamond materials and device technology: a review 15. Three-Dimensional Integration of Diamond and GaN 16. Room-Temperature Bonded Thermally Conductive Semiconductor Interfaces 17. Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates 18. Microfluidic cooling for GaN electronic devices 19. Thermal Effects in Ga2O3 Rectifiers and MOSFETs-Borrowing from GaN