Buch, Englisch, Band 175, 575 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 1042 g
Reihe: NATO Science Series E:
Buch, Englisch, Band 175, 575 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 1042 g
Reihe: NATO Science Series E:
ISBN: 978-0-7923-0536-1
Verlag: Springer Netherlands
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Technik Allgemein Technische Zuverlässigkeit, Sicherheitstechnik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Industrielle Qualitätskontrolle
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
Weitere Infos & Material
I. Reliability Testing.- 1.1 The Influence of Temperature and Use Conditions on the Degradation of LED Parameters.- 1.2 An Historical Perspective of GaAs MESFET Reliability Work at Plessey.- 1.3 Screening and Burn-In: Application to Optoelectronic Device Selection for High-Reliability S280 Optical Submarine Repeaters.- 1.4 Assuring the Reliability of Lasers Intended for the Uncontrolled Environment.- 1.5 Component Burn-In: The Changing Attitude.- II. Reliability Models and Failure Mechanisms.- 2.1 Statistical Models for Device Reliability; An Overview.- 2.2 Computer-Aided Analysis of Integrated Circuit Reliability.- 2.3 Reliability Assessment of CMOS ASIC Designs.- 2.4 Models Used in Undersea Fibre Optic Systems Reliability Prediction.- III. Failure Analysis.- 3.1. Failure Analysis: The Challenge.- 3.2 Gate Metallisation Systems for High Reliability GaAs MESFET Transistors.- 3.3 Reliability Limitations of Metal Electrodes on GaAs.- 3.4 Failure Mechanisms of GaAs MESFETs and Low-Noise HEMTs.- 3.5 Metal Contact Degradation on III–V Compound Semiconductors.- 3.6 Nuclear Methods in the Characterization of Semiconductor Reliability.- IV. Opto-Electronic Reliability (I).- 4.1 A Review of the Reliability of III–V Opto-electronic Components.- 4.2 Considerations on the Degradation of DFB Lasers.- 4.3 InP-Based 4 × 4 Optical Switch Package Qualification and Reliability.- 4.4 Modelling the Effects of Degradation on the Spectral Stability of Distributed Feedback Lasers.- V. Opto-Electronic Reliability (II).- 5.1 Optoelectronic Component Reliability and Failure Analysis.- 5.2 Temperature Cycling Tests of Laser Modules.- 5.3 An Experimental and Theoretical Investigation of Degradation in Semiconductor Lasers Resulting from Electrostatic Discharge.- 5.4 Reliability Testing ofPlanar InGaAs Avalanche Photodiodes.- VI. Compound Semiconductor Reliability.- 6.1 Status of Compound Semiconductor Device Reliability.- 6.2. Investigation into Molecular Beam Epitaxy-Grown FETs and HEMTs.- 6.3 Reliability of GaAs MESFETs.- 6.4 Hydrogen Effects on Reliability of GaAs MMICs.- 6.5 Temperature Distribution on GaAs MESFETs: Thermal Modeling and Experimental Results.- VII. High-Speed Circuit Reliability.- 7.1 High Speed IC Reliability: Concerns and Advances.- 7.2 Reliability of short channel silicon SOI VLSI Devices and Circuits.- 7.3 Special Reliability Issues and Radiation Effects of High Speed ICs.- 7.4 Reliability of High Speed HEMT Integrated Circuits and Multi-2DEG Structures.- 7.5 AlGaAs as a Dielectric on GaAs for Digital IC’S: Problems and Solutions.- Appendix A. Reliability Stress Screening.- Appendix B. Lifetime Extrapolation and Standardization of Tests.