Process and Device Modeling for Integrated Circuit Design

Softcover Nachdruck of the original 1. Auflage 1977
ISBN: 978-94-011-7585-2
Verlag: Springer Netherlands

Buch, Englisch, Band 21, 876 Seiten, Paperback, Format (B × H): 155 mm x 235 mm, Gewicht: 1305 g

Reihe: NATO Science Series E:

An Advanced Study Institute on process and device modeling for integrated circuit design was held in Louvain-la-Neuve. Belgium on July 19-29. 1977 under the auspices of the Scientific Affairs Division of NATO. The Institute was organized by a scientific organizing committee consisting of Professor F. Van de Wiele of the Universite Catholique de Louvain. Professor W. L. Engl of the Technische Hochschule Aachen and Professor P. Jespers of the Universite Catholique de Louvain. This book represents the contributions of the lecturers at the Institute and the chapters present a concise treatment of a very timely subject. namely. process and device modeling for integrated circuit design. The organization of the book parallels the program at the Institute with an introd0ction ·comprised of a review of mo­ deling and basic semiconductor physics. This is followed by the chapters devoted to basic technologies. modeling of bipolar and MoS devices. The last chapter of the book presents the specific topic of process modeling. The subject matter of this book is suitable for a wide range of interests from the advanced student. through the practisihg physicist and engineer. to the research worker. Although a novice may find some difficulty with the mathematical development. he can acquire a perspective into the field of process and device modeling for integrated circuit design with this bDOk. Likewise. portions of this book may be used as a textbook since the chap­ ters are intructional and self-contained.

Zielgruppe

Research

Autoren/Hrsg.

de Wiele, F. van

Jespers, P.

Engl, W.L.

Inhaltsverzeichnis

Section I. Introduction.- Device modeling.- Semiconductor physics and characterization of bipolar transistors.- Section II Basic technologies and measurements.- Diffusion phenomena in silicon.- Silicon epitaxy and oxidation.- Ion implantation.- Pattern generation for integrated circuit fabrication.- Test structures and diagnostic techniques.- Defect characterization.- Measurement techniques.- Fundamental limits in integrated circuits.- Section III Modeling of bipolar devices.- Review of models for bipolar transistors.- Measurements for bipolar devices.- Bipolar transistor model for IC design.- Modeling of bipolar devices.- High current density effects in the collector of bipolar transistors.- Emitter effects in bipolar transistors.- Bipolar models for statistical IC design.- Survey of I2L modeling.- Section IV Modeling of MOS devices.- Review of physical models for MOS transistors.- Characterization and measurements of MOST devices.- Surface characterization. C-V technique.- Surface characterization. Weak inversion.- Ion implanted MOS transistors.- Ion implanted MOS transistors. Depletion mode devices.- Physical MOS models.- Short channels. Scaled down MOSFET’s.- SOS MOSFET’s.- A MOST model for CAD with automated parameter determination.- CAD models of MOSFET’s.- Section V Process modeling.- Process modeling.- Process modeling.- Process oriented IC design.- Modeling of I2L and process selection.- Simulation of integrated circuits fabrication processes.- Participants.- Lecturers.- Scientific organizing committee.