Vincenzini | 6th Forum on New Materials - Part C | Sonstiges | 978-3-03859-008-8 | sack.de

Sonstiges, Englisch, Band Volume 95, 220 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Advances in Science and Technology

Vincenzini

6th Forum on New Materials - Part C

Sonstiges, Englisch, Band Volume 95, 220 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Advances in Science and Technology

ISBN: 978-3-03859-008-8
Verlag: Trans Tech Publications


Collection of selected, peer reviewed papers from the 6th Forum on New Materials, part of CIMTEC 2014-13th International Ceramics Congress and 6th Forum on New Materials, June 15-19, 2014, Montecatini Terme, Italy. The 32 papers are grouped as follows: Chapter 1: Novel Functional Carbon Nanomaterials, Chapter 2: Transport in Inorganic Materials, Chapter 3: Non-Volatile Inorganic Memory Devices, Chapter 4: Novel Superconducting Materials.
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Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and SubstrateResearch of Diamond-Like Carbon Film Deposited by Double Pulsed LasersEvolution of Cu Surface Morphology and its Effect on Graphene Synthesized by Chemical Vapor DepositionLiquid Crystal Assisted Selective Separation of Large Graphene Oxide and its Size Dependent Oxygen Reduction Catalytic EffectThe Possibilities of Graphenes Application in Textronic DevicesImprovement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic CircuitDevelopment of Carbon-Nanotube Composite Thread and its Application to "Thread Transistor"Energy Gap Associated to Photocatalytic Activity of MWCNT/TiO2/ZnO NanocompositesCarbon Coils-Polyurethane Composites for the Shielding Materials of Electromagnetic InterferenceThe Influence of the Exterior Surface on Grain Boundary Mobility MeasurementsProtonic SOFCs Using Perovskite-Type ConductorsVacancy Diffusion under a Stress and Kinetic of Nanovoid Growth in Cubic MetalsTwo-Terminal Non-Volatile Memory Devices Using Silicon Nanowires as the Storage MediumExtraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-OxidesElucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle CalculationResistive Switching Behavior in Undoped a-Fe2O3 Film with a Low ResistivityTwo Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon NanostructuresSwitching in Polymer Memory Devices Based on Polymer and Nanoparticles AdmixtureThermal Properties of In-Sb-Te Thin Films for Phase Change Memory ApplicationThermal Conductivity Measurement of a Sb2Te3 Phase Change NanowireMRAM Concepts for Sub-Nanosecond Switching and Ultimate ScalabilityDoped Hafnium Oxide ? An Enabler for Ferroelectric Field Effect TransistorsIntegration of STT-MRAMs for Embedded Cache MemoriesSuperconductivity at Tc = 36.5 K in Na-Substituted SrFe2As2 Single CrystalsRole of Mg-B-O Nanostructural Inhomogenities on the Performance of Superconducting MgB2Microwave Measurements of Surface Resistance and Complex Conductivity of NdBaCuO FilmsCritical Current Density and Pinning Energy of Partial Melted Sm-Based SuperconductorCritical Current of Bi-2212 Single Crystal by Doping Oxides as a Pinning CenterHigh Critical Currents in Single Grain YBa2Cu3Oy Bulk Superconductors Produced by Infiltration-GrowthDevelopment of Density Functional Theory for Plasmon-Assisted SuperconductivityFabrication of MgB2 Bulk Magnets with High Critical CurrentsNew Measurements of the Transition to the Normal State Induced by High Current Densities in High-Tc Superconductor Microbridges under Thermal Smallness Conditions


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