Defects-Recognition, Imaging and Physics in Semiconductors XIV

Erscheinungsjahr 2012
ISBN: 978-3-03785-442-6
Verlag: Trans Tech Publications

Buch, Englisch, 324 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 800 g

This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors.Volume is indexed by Thomson Reuters CPCI-S (WoS).

Autoren/Hrsg.

Yamada-Kaneta, Hiroshi

Sakai, Akira

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional TopographyThreading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray TopographyCharacterization of Dislocation Structures in Hexagonal SiC by Transmission Electron MicroscopyPhotoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC EpilayersFormation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical PolishingBasal Plane Dislocations in 4H-SiC Epilayers with Different DopingsFrank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE MethodSeparation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiCStudy of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial LayersDifferent Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-Si? under Electron Beam IrradiationDensity of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 GasDefect Related Leakage Current Components in SiC Schottky Barrier DiodeRapid Terahertz Imaging of Carrier Density of 3C-SiCCathodoluminescence Study of Ammonothermal GaN CrystalsThe Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk CrystalsDefect Propagation from 3C-SiC to III-NitrideCharacterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTsDistribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray TopographyEffects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space MappingNitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal SignalIntermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode LasersKinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode LasersNondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz WavesLock-In Thermography and Related Topics in Photovoltaic ResearchElectrical/Optical Activities of Grain Boundaries in Multicrystalline SiEBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar CellsEvaluation of Silicon Substrates Fabricated by Seeding Cast TechniqueCombined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting MethodsBehaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade SiliconConsiderations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-SiliconHigh-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar CellsAnalysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam DiffractionStructural Study of Small Angle Grain Boundaries in Multicrystalline SiCombinatorial Synthesis Study of Passivation Layers for Solar Cell ApplicationsChange of the Characterization Techniques as Progress of CuInSe2-Based Thin-Film PV TechnologyTemperature Dependence of Linear Thermal Expansion of CuGaSe2 CrystalsReduction of Crack Formation in Transcription of Cu(In,Ga)Se2 Thin Film Solar Cell StructureEvaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic ModuleTwo-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic ModuleMono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon WafersSpectroscopic Investigation of Silicon Polymorphs Formed by IndentationVibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope EffectsFormation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient SpectroscopyDLTS Study of Pd-H Complexes in SiEffect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic MeasurementsNitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter CapabilitiesRapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz RegionReliability Improvement in Silicon DioxideGate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETsImpact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si WafersDensity Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100)Effect of Si3N4 Coating on Strain and Fracture of Si IngotsEvaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size ReductionMicroRaman Spectroscopy of Si Nanowires: Influence of SizeElectron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming ProcessStructural and Electronic Structure of SnO2 by the First-Principle StudyXRD Investigation of the Crystalline Quality of Sn Doped ?-Ga2O3 Films Deposited by the RF Magnetron Sputtering MethodImprovement of the Crystalline Quality of ?-Ga2O3 Films by High-Temperature AnnealingCharacterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor SolutionElectrical Properties of Fluorine Doped Tin Dioxide Film Grown by Spray MethodEffect of Si Doping on the Crystal Structure of HVPE Grown Boron PhosphideEvaluation of GexSbyTez Film Grown by Chemical Vapor Deposition