Sonstiges, Englisch, 1760 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1760 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-885-5
Verlag: Trans Tech Publications
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Silicon Carbide Technology in New EraCharacterisation and Defects in Silicon CarbideOpportunities and Technical Strategies for Silicon Carbide Device DevelopmentHigh Quality SiC Substrates for Semiconductor Devices: From Research to Industrial ProductionGrowth and Defect Reduction of Bulk SiC CrystalsGrowth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor TransportLateral Enlargement of Silicon Carbide CrystalsNumerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth4H Polytype Grain Formation in PVT-Grown 6H-SiC IngotsThe Development of 2in 6H-SiC Wafer with High Thermal-ConductivityEvolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiCReduction of Macrodefects in Bulk SiC Single CrystalsModel for Macroscopic Slits in 6H- and 4H-SiC Single CrystalsMacrodefect Generation in SiC Single Crystals Caused by Polytype ChangesThe Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon CarbideCharacterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely MethodObservation of Planar Defects in 2-inch SiC WaferFlux-Controlled Sublimation Growth by an Inner Guide-TubeGrowth and Evaluation of High Quality SiC Crystal by Sublimation Method'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray ImagingInfluence of the Crystal Thickness on the SiC PVT Growth RateMicropipe Formation Model via Surface Step InteractionSelf-Healing Phenomenon of Micropipes in Silicon CarbideA Method of Reducing Micropipes in Thin Films by Using Sublimation GrowthDislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal GrowthThe Effect of Nitrogen on Crystal Growth of SiC on (11-20) SubstratesTemperature Dependence of Sublimation Growth of 6H-SiC on (11-20) SubstratesThe Development of 4H-SiC {03-38} WafersIncorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal GrowthAluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth MethodResistivity Mapping of Semi-Insulating 6H-SiC WafersOn the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk CrystalsSolid-Phase Epitaxial Growth of Bulk SiC Single CrystalsFull Si Wafer Conversion into Bulk 3C-SiCQuaSiC Smart-Cut? Substrates for SiC High Power DevicesCVD SiC Powder for High-Purity SiC Source MaterialDirect Synthesis and Growth of SiC Single Crystal from Ultrafine Particle PrecursorRecent Achievements and Future Challenges in SiC Homoepitaxial GrowthGrowth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC EpilayersFast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVDHigh-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD ReactorFast Growth and Doping Characteristics of a-SiC in Horizontal Cold-Wall Chemical Vapor DepositionHighly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical RotationGrowth Characteristics of SiC in a Hot-Wall CVD Reactor with RotationEpitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] DirectionHot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 SystemAluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process ParametersAluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD SystemVapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the PrecursorInvestigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor DepositionPredicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor DepositionSimulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor DepositionSimulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD ReactorBending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial LayersThe Effect of Epitaxial Growth on Warp of SiC WafersIn Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD GrowthSurface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVDDelta-Doped Layers of SiC Grown by 'Pulse Doping' TechniqueHomoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free SurfacesFormation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) SubstratesCharacteristics of Boron in 4H-SiC Layers Produced by High-Temperature TechniquesEpitaxial Growth of 4H-SiC with Hexamethyldisilane HMDSHomoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane PrecursorTEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction CharacteristicsHomoepitaxial Growth of Cubic Silicon Carbide by Sublimation EpitaxyImpact of the Initial Surface Conditions on Defect Appearance in 4H-SiC EpilayersEffect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial LayersLiquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic ContactsTraveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiCHomoepitaxial Growth of 4H-SiC Thin Film Below 1000?C by Microwave Plasma Chemical Vapor DepositionIn Situ Etching of SiC Wafers in a CVD System Using Oxygen as the SourceSiO2 as Oxygen Source for the Chemical Vapor Transport of SiCGrowth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy3C-SiC Growth on 6H-SiC (0001) SubstratesHeteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) SubstratesComparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC FilmsGrowth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown LayersSelective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si SubstrateEvaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by EllipsometryIn Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVDImproved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOIStudy of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric FurnaceFormation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer LayerElectrical Characterization of SiC/Si Heterostructures with Modified InterfacesVoid-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized SiliconReaction Mechanism of the Carbonization Process by Low-Energy Ion SubplantationComparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVDFabrication of a-SiC Heteroepitaxial Films by YAG-PLAD MethodLow-Temperature Preparation of a-SiC Epitaxial Films by Nd: YAG Pulsed-Laser DepositionPhysics of Heteroepitaxy and HeterophasesGrowth-Induced Structural Defects in SiC PVT BoulesPolytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray TopographyBehavior of Micropipes during Growth in 4H-SiCReduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed CrystalsStress Distribution in 2in SiC Wafer Measured by Photoelastic MethodCharacterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8Observation of 2in SiC Wafer by SWBXT at SPring-8Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiCInvestigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron TopographyStructural Defects in Electrically Degraded 4H-SiC PiN DiodesPropagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN DiodesOptical Emission Microscopy of Structural Defects in 4H-SiC PiN DiodesStructure of 2D-Nucleation-Induced Stacking Faults in 6H-SiCTheoretical Calculation of Stacking Fault Energies in Silicon CarbideA Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC LayersReplication of Defects from 4H-SiC Wafer to Epitaxial Layer4H- to 3C-SiC Polytypic Transformation during OxidationOxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC WafersInvestigation of the Relationship between Defects and Electrical Properties of 3C-SiC EpilayersRHEED: A Tool for Structural Investigations of Thin Polytypic SiC LayersElectron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission GunThe Nature and Diffusion of Intrinsic Point Defects in SiCTheoretical Investigation of an Intrinsic Defect in SiCCarbon Interstitials in SiC: A Model for the DII CenterChemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening TechniqueRadiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient SpectroscopyVacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation SpectroscopyEPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiCThe Neutral Silicon Vacancy in SiC: Ligand Hyperfine InteractionProperties of the UD-1 Deep-Level Center in 4H-SiCElectronic Structure of the UD3 Defect in 4H- and 6H-SiCDepth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiCElectrical Properties of Neutron-Irradiated Silicon CarbideRadiation-Induced Defects in p-Type Silicon CarbideHole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron ResonanceElectronic Localization around Stacking Faults in Silicon CarbideTheoretical Study of Cubic Polytype Inclusions in 4H-SiCFull-Band Monte Carlo Simulation of Electron Transport in 3C-SiCPhysical Mechanism for the Anomalous Behavior of n-Type Dopants in SiCInfluence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data AnalysisElectrical Activity of Residual Boron in Silicon CarbideAb Initio Calculations of B Diffusion in SiCAluminum and Boron Diffusion into (1-100) Face SiC SubstratesImpurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiCIncorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial GrowthHydrogen Incorporation into SiC Using Plasma-HydrogenationPolytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiCTheoretical Studies of Vanadium Impurity in ?-SiCNew and Improved Quantitative Characterization of SiC Using SIMSExperiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiCSpectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD ReactorCharacterization of Bulk and Epitaxial SiC Material Using Photoluminescence SpectroscopyCharacterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV ExcitationUV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiCMapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-TemperaturePhotoluminescence Investigation of Hydrogen Interaction with Defects in SiCPhotoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding EnergyCharacterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation SpectrumSpatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared SpectroscopyExperimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman SpectroscopySensitive Detection of Defects in a and ? SiC by Raman ScatteringRaman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiCA Raman Study of Metal-SiC Interface ReactionsUltrafast Electron Relaxation Processes in SiCOptical Characterization of Ion-Implanted 4H-SiCBreakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiCQuantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance MicroscopyScanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor DepositionCarrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance MicroscopyNanoscale Electrical Characterization of 3C-SiC Layers by Conductive Atomic Force MicroscopyPoint-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon CarbideOptical and Electrical Characterization of Free-Standing 3C-SiC Films Grown on Undulant 6in Si SubstratesInfluence of Excited States of Deep Acceptors on Hole Concentrations in SiCp-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical CharacterizationScanning Acoustic Microscopy in Porous SiCAtomic-Scale Passivation of Silicon Carbide SurfacesAdsorption of Metastable Molecular Oxygen on SiC(0001)-v3 x v3Oxidation States Present on SiC (0001) after Oxygen ExposureAdsorbate Effects of the Surface Structure of 6H-SiC(0001) v3xv3-R30?In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC SurfacesA High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC SurfacesWet-Chemical Preparation of Silicate Adlayer Reconstructed SiC(0001) Surfaces as Studied by PES and LEEDPhotoemission Electron Imaging of Transition Metal (Ti, Ni) Surfaces on Si and SiCIn Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)Atomic-Step Observations on 6H- and 15R-SiC Polished SurfacesOptimization of Interface and Interphase Systems: The Case of SiC and III-V NitridesTowards Quantum Structures in SiCModification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell CalculationsGrowth and Characterization of Three-Dimensional SiC Nanostructures on SiHole Resonant Tunneling through SiC/Si-dot/SiC HeterostructuresDevelopment of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface MicromachiningInfluence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon CarbideThermoelectric Properties of 3C-SiC Produced by Silicon CarbonizationThe Brittle-to-Ductile Transition in 4H-SiCAnnealing of Implanted Layers in (1-100) and (11-20) Oriented SiCRange Distributions of Implanted Ions in Silicon CarbidePhosphorus Ion Implantation into 4H-SiC (0001) and (11-20)Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiCCodoping of 4H-SiC with N- and P-Donors by Ion ImplantationImprovements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal AnnealingLow-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser AnnealingElectrical Characteristics of Al+ Ion-Implanted 4H-SiCMicro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiCComparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiCDamage Evolution and Recovery in Al-Implanted 4H-SiCComparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN CapInfluence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiCA Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature EffectsPost-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with AluminumIon Implantation - Tool for Fabrication of Advanced 4H-SiC DevicesAnnealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiCIon-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient SpectroscopyEnhanced Dopant Diffusion Effects in 4H Silicon CarbideInfrared Investigation of Implantation Damage in 6H-SiCSuppression of Macrostep Formation in 4H-SiC Using a Cap Oxide LayerMasking Process for High-Energy and High-Temperature Ion ImplantationLaser Crystallization Mechanism of Amorphous SiC Thin FilmsExperimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon CarbideOhmic Contact Structure and Fabrication Process Applicable to Practical SiC DevicesCoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiCNiSi2 Ohmic Contact to n-Type 4H-SiCElectrical Characterization of Nickel Silicide Contacts on Silicon CarbideEffects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiCInfluence of Rapid Thermal Annealing on Ni/6H-SiC Contact FormationEffect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC ContactsEffects of Surface Treatments of 6H-SiC upon Metal-SiC InterfacesTitanium-Based Ohmic Contact on p-Type 4H-SiCReliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n DiodeSchottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal PhotoemissionElectrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky RectifiersEffect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiCCharacteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic OxidationReduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon CarbideSome Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon CarbideElectrical Properties of Graphite/p-Type Homoepitaxial Diamond ContactReactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma-Etching ProcessElectrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 PlasmaPhotoelectrochemical Etching Process of 6H-SiC Wafers Using HF-Based Solution and H2O2 Solution as ElectrolytesOxidation of Silicon Carbide: Problems and SolutionsPassivation of the 4H-SiC/SiO2 Interface with Nitric OxidePassivation of the Oxide/4H-SiC InterfaceEffect of Process Variations on 4H Silicon Carbide n-Channel MOSFET MobilitiesHigh-Current, NO-Annealed Lateral 4H-SiC MOSFETsN2O Processing Improves the 4H-SiC:SiO2 InterfaceReduction of Interface Trap Density in 4H-SiC MOS by High-Temperature OxidationImproving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and AnnealingImprovement of SiO2/a-SiC Interface Properties by Nitrogen Radical TreatmentNew Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS StructuresOn Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor StructuresEffects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor StructuresThe Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical MeasurementsCharacteristics of Mobile Ions in the SiO2 Films of SiC-MOS StructuresAbnormal Hysteresis Property of SiC Oxide C-V CharacteristicsESR Characterization of SiC Bulk Crystals and SiO2/SiC InterfaceCharacterization of the Interfaces between SiC and Oxide Films by Spectroscopic EllipsometryX-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC InterfacesSIMS Analyses of SiO2/4H-SiC(0001) InterfaceHall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETsCorrelation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETsInfluence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETsInfluence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETsA Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation AnnealingSignificant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing4H-SiC MOSFETs on (03-38) FaceImproved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide4H-SiC Delta-Doped Accumulation-Channel MOS FETChannel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC InterfaceTCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon GateHysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETsGamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-OxideRadiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic ConditionsSurface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic OxidationPlasma Oxidation of SiC at Low Temperatures (below 300?C)Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiCOxidation of Porous 4H-SiC SubstratesAdvances in SiC Materials and Technology for Schottky Diode ApplicationsComparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV RangeA JBS Diode with Controlled Forward Temperature Coefficient and Surge Current CapabilityImpact of Material Defects on SiC Schottky Barrier DiodesA Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated MicropipesAnalysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements4H-SiC Schottky Diodes with High On/Off Current RatioOptimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky DiodesPerformance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse BiasHigh-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge TerminationsDevelopment of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge TerminationMinimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier DiodeReverse Characteristics of a 4H-SiC Schottky Barrier DiodePower Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kWPerformance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter SpaceApplication-Oriented Unipolar Switching SiC DevicesHigh-Performance UMOSFETs in 4H-SiCLarge-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m O cm2Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETsOptimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETsSiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH EtchingA 600 V SiC Trench JFETA Novel High-Voltage Normally-Off 4H-SiC Vertical JFET2 kV 4H-SiC Junction FETsDesign and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect TransistorInfluence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect TransistorsStatic and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power SwitchesSimulation Study of a Novel Current-Limiting Device: A Vertical a-SiC JFET - Controlled Current LimiterRealization of a High-Current and Low RON 600V Current-Limiting DeviceSuper-Junction Device Forward Characteristics and Switched Power LimitationsSilicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated CircuitsHigh-Power SiC Diodes: Characteristics, Reliability and Relation to Material DefectsHigh-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN RectifiersStudy of SiC PiN Diodes Subjected to High Current Density PulsesHigh-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion ImplantationMeasurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic DefectsMicrostructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC DiodesElectrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial LayersStudy of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC CharacterizationPhoton Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche RegimeElectroluminescence Analysis of Al+ and B+ Implanted pn DiodesAn Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV DetectorsA Novel Technology for the Formation of a Very Small Bevel Angle for Edge TerminationThe Deep Boron Level in High-Voltage PiN DiodesElectrical Characteristics of 4H-SiC pn Diode Grown by LPE MethodHighly-Doped Implanted pn Junction for SiC Zener Diode FabricationUnipolar and Bipolar SiC Integral Cascoded Switches with MOS and Junction Gate - Simulation StudyAll-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 AImprovement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiCOn the Temperature Coefficient of 4H-SiC npn Transistor Current GainInvestigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar TransistorsHybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJTA Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiCDynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors4H-SiC IMPATT Diode Fabrication and TestingDemonstration of IMPATT Diode Oscillators in 4H-SiCInfluence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETsDevelopment and Demonstration of High-Power X-Band SiC MESFETsHot-Carrier Luminescence in 4H-SiC MESFETsHigh-Performance Silicon Carbide MESFET Utilizing Lateral EpitaxyInfluence of Gate Finger Width on RF Characteristics of 4H-SiC MESFETFabrication of 4H-SiC Planar MESFETs Having Low Contact ResistanceSurface Control of 4H-SiC MESFETsCharacteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiCEvaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations4H-SiC MESFET Large-Signal Modeling Using Modified Materka ModelCompatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFETThe Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a GateSilicon Carbide Microwave LimitersMISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment ApplicationsThe Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High TemperaturesInfluence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature ConditionsA New Type of SiC Gas Sensor with a pn-Junction StructureDemonstration of 4H-SiC Avalanche Photodiode Linear Array4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh EnvironmentsN and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle DetectorsSublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal QualityCrystal Growth of Aluminum Nitride by Sublimation Close Space TechniqueAluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray CharacterizationHeteroepitaxial Growth of Insulating AlN on 6H-SiC by MBERHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam EpitaxySurface Morphology of GaN Epilayer with SixN1-x Buffer Layer Grown by Ammonia-source MBEGrowth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell PressureGaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon SubstratesGrowth and Characterization of GaGdN and AlGdN on SiC by RF-MBEGrowth of Epitaxial (SiC)x(AlN)1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter DepositionSilicon Carbide Buffer Layers for Nitride Growth on SiCrystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiCPhotoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting DiodesPhotoreflectance Characterization of GaNAs/GaAs Multiple Quantum Well StructuresRaman Scattering from Wurtzite GaN Bulk CrystalRecent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power ApplicationsHigh Performance AlGaN/GaN HEMTs with Recessed GateBroadband Push-Pull Microwave Power Amplifier Using AlGaN/GaN HEMTs on SiCTemperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect TransistorThermal Analysis of GaN-Based HFET Devices Using the Unit Thermal Profile ApproachAlGaN/GaN Hetero Field-Effect Transistor for a Large Current OperationGallium Nitride Power Device Design TradeoffsGallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
