Sonstiges, Englisch, Band Volume 897, 796 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
Sonstiges, Englisch, Band Volume 897, 796 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
ISBN: 978-3-0357-2043-3
Verlag: Trans Tech Publications
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-DopingReduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled SeedsQuality Improvement of 4?? 4H-SiC Crystal by Using Modified Seed Adhesion Method3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding LayersReduction of Dislocation Density of SiC Crystals Grown on Seeds after H2 EtchingSiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype TransformationFormation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution GrowthSolvent Design for High-Purity SiC Solution GrowthEvaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVDAnalysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson EffectCarrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron DopingHigh-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar DevicesImprovement of Quality of Thick 4H-SiC EpilayersVery High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ EmittersV and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier LifetimesHydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power DeviceInvestigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer LayerInfluence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC LayersDepth Profile of Doping Concentration in Thick (> 100 ?m) and Low-Doped (< 4 ? 1014 cm-3) 4H-SiC EpilayersSilicon Deposition on 3C-SiC Seeds of Different OrientationsGrowth of Cubic Silicon Carbide on Silicon Using Hot Filament CVDA Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale ReactorsSusceptor Coating Materials Applicable for SiC Reactor CleaningAnalysis of 4H-SiC MOS Capacitors on Macro-Stepped SurfacesQuantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient SpectroscopyAnalysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETsAnalysis of Thin Thermal Oxides on (0001) SiC Epitaxial LayersAnomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current MeasurementsTwo-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric MicroscopyOxidation Effect for the Carbon Related Defect Formation in SiC/SiO2 Interface by First Principles CalculationLow Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of AlNon-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow StatesImproved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping TechniqueConductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong AccumulationPhysical Characterisation of 3C-SiC(001)/SiO2 Interface Using XPSFunctional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET IncorporationUniversal Parameter Evaluating SiO2/SiC Interface Quality Based on Scanning Nonlinear Dielectric MicroscopyElectrical Properties and Interface Structure of SiC MOSFETs with Barium Interface PassivationThe Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS CapacitorsThree Dimensional Dislocation Analysis of Threading Mixed Dislocation Using Multi Directional Scanning Transmission Electron MicroscopyCorrelation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)4H-SiC Defects Evolution by Thermal ProcessesElementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit EvaluationInvestigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC BoulesLow Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL ImagingObservation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEMOn Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiCSEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial LayersResolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC WafersModeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFETExtension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse StressDetection of Crystal Defects in High Doped Epitaxial Layers and Substrates by PhotoluminescenceExploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical CharacterizationCreation and Functionalization of Defects in SiC by Proton Beam WritingInfluence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial LayersNew Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark LocalizationPoint Defects Investigation of High Energy Proton Irradiated SiC p+-i-n DiodesNew Evidence for the Second Conduction Band in 4H SiCOn Electrons Mobility in Heavily Nitrogen Doped 4H-SiCDepth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy EliminationFormation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature TreatmentsDensity Functional Theory on NV Center in 4H SiCComparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC SubstratesDLTS Study on Al+ Ion Implanted and 1950?C Annealed p-i-n 4H-SiC Vertical DiodesMicro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC SubstratePoint Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping ProfilesEffect of Neutron Irradiation on SiC Etching in KOH MeltEmploying Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon CarbideCharacterization of B-Implanted 3C-SiC for Intermediate Band Solar CellsDetection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL AnalysisGrowth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC CrystalsEffect of 3C-SiC Irradiation with 8 MeV ProtonsPhotoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap ExcitationUltrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface PropertiesCharacterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments ApplicationsProperties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature ProcessRe-Investigation of SiC/SiO2 Interface Passivation by Nitrogen AnnealingStructure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using BariumCombined N2O and Phosphorus Passivations for the 4H-SiC/SiO2 Interface with Oxide Grown at 1400?CEnhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth MetalImproved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron DiffusionEnhanced Low-Temperature Oxidation of 4H-SiC Using SrTi1-xMgxO3-dStudy of Etching Processes for SiC Defect AnalysisInvestigation on Wet Etching 4H-SiC Damaged by Ion Implantation4H-SiC Trench Structure Fabrication with Al2O3 Etching MaskImproving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching TechnologyFabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC WafersA Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride GasDemonstrating the Instability of SiC Ohmic Contacts and Drain Terminal Metallization Schemes Aged at 300 ?CNi-Al-Ti Ohmic Contacts on Al Implanted 4H-SiCEffect of Annealing on the Characteristics of Ti/Al Ohmic Contacts to p-Type 4H-SiCLow Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser AnnealingLaser Assisted SiC Wafering Using COLD SPLITSalicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETsAn Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiCSuppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer10+ kV Implantation-Free 4H-SiC PiN Diodes4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current DensitySimulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics6.5 kV 4H-SiC PiN Diodes without Bipolar DegradationAl+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier LifetimesAn Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor InterfacesDegradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV ElectronsDemonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination ExtensionDesign Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS RectifierEffect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn StructuresLifetime Control in SiC PiN Diodes Using Radiation DefectsThe Effect of Incomplete Ionization on SiC Devices during High Speed SwitchingOn the Influence of Active Area Design on the Performance of SiC JBS DiodesDemonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode0.97 mOcm2/820 V 4H-SiC Super Junction V-Groove Trench MOSFET1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold VoltageUnderstanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETsSwitching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p+ RegionsFeasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production EnvironmentsElectrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS TransistorsDesign and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)Next Generation Planar 1700 V, 20 mO 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching SpeedShort-Circuit Robustness Testing of SiC MOSFETsNovel Advanced Analytical Design Tool for 4H-SiC VDMOSFET DevicesNegative Bias Temperature Instability on Subthreshold Swing of SiC MOSFETImpact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage ClassesAnalysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate ElectrodeComparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic TemperaturesDynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFETComprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCADCryogenic Characterisation and Modelling of Commercial SiC MOSFETsCollector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 ?C to 700 ?CImproved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based SimulationSimulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOsTotal Dose Effects on 4H-SiC Bipolar Junction Transistors16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch DevelopmentImpact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO ThyristorCapacitances in 4H-SiC TSI-VJFETsComparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and SimulationsTuning Performance of Silicon Carbide Micro-ResonatorsBarrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature SensingDesign and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with GainEffect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-PhotodiodesImplementation of 4H-SiC Pin-Diodes as Nearly Linear Temperature Sensors up to 800 K towards SiC Multi-Sensor IntegrationOptimization of 4H-SiC Photodiodes as Selective UV SensorsSilicon Carbide Radiation Detectors for Medical Applications4H-SiC PIN Diode as High Temperature Multifunction SensorLocalized Surface Plasmon on 6H SiC with Ag NanoparticlesChemical Stability of Si-SiC Nanostructures under Physiological ConditionsCorona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) PseudosubstratesPerformance Evaluation and Expected Challenges of Silicon Carbide Power MOSFETs for High Voltage ApplicationsChallenges on Drive Circuit Design for Series-Connected SiC Power TransistorsMonolithically Integrated Solid-State-Circuit-Breaker for High Power ApplicationsExperimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics650V SiC Cascode: A Breakthrough for Wide-Bandgap SwitchesA Built-In High Temperature Half-Bridge Power Module with Low Stray Inductance and Low Thermal Resistance for In-Wheel Motor ApplicationHigh Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC TechnologyHigh Frequency Power Supply with 3.3 kV SiC-MOSFETs for Accelerator ApplicationSwitching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC ElementSwitching Analysis for All-SiC ModuleSiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded StackSiC Power Devices in Impedance Source ConvertersDislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPEThermal and Lattice Misfit Stress Relaxation in Growing AlN Crystal with Simultaneous Evaporation of SiC SubstrateThermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with Gan-on-SiC HemtsPrediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC InterfaceInvestigation of Direct Water Photoelectrolysis Process Using III-N StructuresHigh Temperature Grown Graphene on SiC Studied by Raman and FTIR SpectroscopyCVD Growth of Graphene on SiC (0001): Influence of Substrate OffcutNanostructuring of Graphene on Semi-Insulating SiCRealization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical DetectionsHigh Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor DevicesThe Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power DevicesNumerical Study of Energy Capability of Si/SiC LDMOSFETsBulk ?-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
