Silicon Carbide and Related Materials 2014

Erscheinungsjahr 2015
ISBN: 978-3-03835-478-9
Verlag: Trans Tech Publications

Buch, Englisch, 1078 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1680 g

Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. The 243 papers are grouped as follows: I. SiC Growth; I.1 Bulk Growth; I.2 Epitaxial and Thin Film Growth; II. SiC Theory and Characterization; II.1 Fundamental and Material Properties; II.2 Point and Extended Defects; II.3 Surfaces and Interfaces; III. SiC Processing; III.1 Doping, Implantation and Contact; III.2 Dielectric Growth and Characterization; III.3 Etching and Machining; IV. SiC Devices; IV.1 Diodes; IV.2 Field Effect Transistors; IV.3 Other Devices; V. Related Materials; V.1 Other Carbon Based Materials; V.2 Nitrides and Other Materials

Autoren/Hrsg.

Chaussende, Didier

Ferro, Gabriel

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Preface, Committees and Sponsors
Chapter I: SiC Material
I.1 Bulk Growth
Dislocation Conversion During SiC Solution Growth for High-Quality Crystals
4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent
Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal
Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal
Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth
Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC
Research on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution Growth
Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method
Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
High Quality 100 mm 4H-SiC Substrate
High Quality 150 mm 4H SiC Wafers for Power Device Production
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules
Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces
Polarity Inversion of SiC(0001) during the Al Doped PVT Growth
Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC
SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders
Stacking Fault Formatio