Sonstiges, Englisch, Band Volumes 821-823, 1078 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
Sonstiges, Englisch, Band Volumes 821-823, 1078 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
ISBN: 978-3-03859-258-7
Verlag: Trans Tech Publications
The 243 papers are grouped as follows:
I. SiC Growth;
I.1 Bulk Growth;
I.2 Epitaxial and Thin Film Growth;
II. SiC Theory and Characterization;
II.1 Fundamental and Material Properties;
II.2 Point and Extended Defects;
II.3 Surfaces and Interfaces;
III. SiC Processing;
III.1 Doping, Implantation and Contact;
III.2 Dielectric Growth and Characterization;
III.3 Etching and Machining;
IV. SiC Devices;
IV.1 Diodes;
IV.2 Field Effect Transistors;
IV.3 Other Devices;
V. Related Materials;
V.1 Other Carbon Based Materials;
V.2 Nitrides and Other Materials
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Dislocation Conversion During SiC Solution Growth for High-Quality Crystals4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping ConditionsChange in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si SolventControl of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC CrystalEffect of Forced Convection by Crucible Design in Solution Growth of SiC Single CrystalEffects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution GrowthImprovement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis SeedsInfluences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiCResearch on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution GrowthEffect of Porous Graphite for High Quality SiC Crystal Growth by PVT MethodGrowth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation MethodHigh Quality 100 mm 4H-SiC SubstrateHigh Quality 150 mm 4H SiC Wafers for Power Device ProductionNitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiCObservation of the Surface Morphology on the (0001)C Facet of 4H-SiC BoulesPhysical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal SurfacesPolarity Inversion of SiC(0001) during the Al Doped PVT GrowthQuantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiCSIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source PowdersStacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiCStructural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC CrystalsAssessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics ApproachCharacterization of Second-Phase Inclusion in Silicon Carbide PowdersHigh-Speed and Long-Length SiC Growth Using High-Temperature Gas Source MethodControlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical SemiconductorGe Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of IncorporationBehavior and Chemical Reactions of Liquid Si and Ge on Si? SurfaceCleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition ReactorEffect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane PrecursorInfluence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC EpitaxyStudy of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD FurnaceThe Role of Chlorine during High Growth Rate EpitaxyStudy of Al Incorporation in Chemical Vapor Deposition of p-Doped SiCInfluence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorEpitaxial Growth on 150 mm 2? off WafersProgress of SiC Epitaxy on 150mm SubstratesSiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch ReactorUniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiCCharacterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial WafersInfluence of Epi-Layer Growth Pits on SiC Device CharacteristicsLow Pressure Homoepitaxial Growth of 4H-SiC on 4?off-Axis Substrates3C-SiC Crystal on Sapphire by Solution Growth Method3C-SiC Polycrystalline Films on Si for Photovoltaic ApplicationsDefect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate PatterningHigh Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si2Cl6+C3H8Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented and 6H-SiC Substrates: Role of Step-Island InteractionSi Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ OxidationUnderstanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on a-SiC Substrate by CVDPLD Grown 3C-SiC Thin Films on Si: Morphology and StructureEffect of Nitrogen Dilution in the Optical Properties of Amorphous SiC Thin FilmsTemperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced CurrentCharacterising Strain/Stress and Defects in SiC Wafers Using Raman ImagingResidual Stress Analysis of Indentation on 4H-SiC by Deep-Ultraviolet Excited Raman SpectroscopyComparative Study of n-Type 4H-SiC: Raman vs Photoluminescence SpectroscopyApplying Chemometrics for Analysis of SiC Raman Imaging DataProbing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum PulsesOptical Characterization of p-Type 4H-SiC EpilayersPhotoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of GrowthCorrelations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent AnalysisFTIR Studies of Silicon Carbide 1D-NanostructuresInfrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single CrystalsTwo-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown LayersA Novel Approach to Measuring Doping in SiC by Micro Spot Corona-Kelvin MethodThe Bloch Oscillations and THz Electroluminescence in Natural Superlattices of 6H-, 8H-SiC PolytypesMechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS StructuresObservation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron MicroscopeFeatures of the Band-Edge Injection Electroluminescence in 4H-SiC pn StructuresConductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV ElectronsElimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal AnnealingBasal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM ObservationStudy on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy ImageRelations between Surface Morphology and Dislocations of SiC CrystalAnnealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN DiodeStudies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiCIdentification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4?-off 4H-SiC EpilayersPhotoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC EpilayersSimple Models for Stacking-Fault Formations in 4H-Si? Epitaxial Layer4H-SiC Defects Analysis by Micro Raman Spectroscopy3D Raman Spectroscopy Investigation of Defects in 4H-SiC EpilayerThree-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge PhotoluminescenceReduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiCIsothermal Treatment Effects on the Carbon Vacancy in 4H Silicon CarbideAtomic-Scale Defects in Silicon Carbide for Quantum Sensing ApplicationsStructural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
Ab Initio Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) SurfacesStarting Point of Step-Bunching Defects on 4H-SiC Si-Face SubstratesSurface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic EllipsometryTuning Optoelectronic Properties of 4H-SiC QDs Using -H, -OH and -F Surface FunctionalisationSiC Device Manufacturing: How Processing Impacts the Material and Device PropertiesBasal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation AnnealEstimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern AnalysisOhmic Contact on n-Type 3C-SiC Activated with SiO2 EncapsulationAl+ Ion Implanted On-Axis Semi-Insulating 4H-SiCShallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance SpectroscopyDistribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiCProcess Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide DevicesAbout the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al)Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich EnvironmentsPreliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky ContactsEvolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal AnnealingA Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti AnnealingElectrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature SensorSputtered Ohmic Cobalt Silicide Contacts to 4H-SiCInvestigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiCExtremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer LaserInvestigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and DBC SubstrateInfluence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping DensitiesCharacterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence SpectroscopyFabrication of 3C-SiC MOS Capacitors Using High-Temperature OxidationDirect Observation of Dielectric Breakdown at Step-Bunching on 4H-SiCEvaluation of F-N Tunneling Emission Current in MOS Capacitor Fabricated on Step BunchingInfluence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance MeasurementsInversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 InterfacesImproving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce FurnaceTailoring the Interface between Dielectric and 4H-SiC by Ion ImplantationInfluence of Phosphorous Auto-Doping on the Characteristics of SiO2/SiC Gate DielectricsInfluence of Phosphorus Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS StructureCharacteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiCPlasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed GasesPassivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride LayerMOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial LayersAn Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS CapacitorsComparison of Different Novel Chip Separation Methods for 4H-SiCHigh-Speed Dicing of SiC Wafers by Femtosecond Pulsed LaserThermal Laser Separation ? A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC DevicesElimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow MaskingPlanarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred EtchingRemoval of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial GrowthEffect of Surface Damage on SiC Wafer ShapePlanarization of Epitaxial SiC Trench Structures by Plasma Ion EtchingChlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry EtcherLow Frequency Noise in 4H-SiC Schottky Diodes Under Forward BiasImpact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier DiodeImprovement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface PlanarizationSi1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage CurrentIon-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier DiodesFabrication and Application of 1.7KV SiC-Schottky DiodesCryogenic to High Temperature Exploration of 4H-SiC W-SBDA Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier DiodeStatic and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC ModulesInfluence of Trench Structure on Reverse Characteristics of 4H-SiC JBS DiodesTemperature-Dependent Characteristics of 4H-SiC Buried Grid JBS DiodesComparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV ApplicationsA New 1200V SiC MPS Diode with Improved Performance and RuggednessThe Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode CharacteristicsThermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kAIon Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiCSimulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature ApplicationsAnalytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H-SiC p+-i-n DiodesTemperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p?-n+ 4H-SiC Drift Step Recovery Diodes4H-Silicon Carbide p-n Diode for High Temperature (600 ?C) Environment ApplicationsObservation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4?-Off (0001) p-n Diodes Terminated with a Floating-Field Ring4H-SiC P+N UV Photodiodes for Space ApplicationsCharacterization of 4H-SiC pn Structures with Unstable Excess CurrentThe Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power DevicesRobust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiCIndustrial Approach for Next Generation of Power Devices Based on 4H-SiCProton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open IssueInstability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETsBias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETsDegradation and Reliability of Bare Dies Operated up to 300?CExact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation MethodSiC MOSFETs in Hard-Switching Bidirectional DC/DC ConvertersChannel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO AnnealingSimulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability MeasurementsNext-Generation Planar SiC MOSFETs from 900 V to 15 kVRecovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal TreatmentsImpact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETsStudy of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETsStudy of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical CharacterizationComparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) FacesReliable 4H-SiC MOSFET with High Threshold Voltage by Al2O3-Inserted Gate InsulatorEffect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE TerminationsElectrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of DefectsEffect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and InterpretationGate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom OxideCharacterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (= 10 K)High-Mobility SiC MOSFETs with Chemically Modified InterfacesImpact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom OxidesImproved Evaluation Method for Channel Mobility in SiC Trench MOSFETsIntroduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFETCIMOSFET: A New MOSFET on SiC with a Superior Ron?Qgd Figure of MeritLow Rons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base RegionElectrical Properties Evaluation on High Quality Hetero-Epitaxial 3C-SiC(001) for MOSFET ApplicationsCryogenic Characterization of Commercial SiC Power MOSFETsElectrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC DesignThe Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power DevicesVLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures4H-SiC VJFETs with Self-Aligned ContactsBulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFETIR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device PrototypesTemperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-CapabilityShort-Circuit Capability Exploration of Silicon Carbide DevicesCharacterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High TemperatureImprovement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial LayerImprovement of the Current Gain Stability of SiC Junction TransistorsDynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction TransistorsDevelopment of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power ModuleInvestigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges4.5-kV 20-mO.cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination ExtensionDevice Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs27 kV, 20 A 4H-SiC n-IGBTsGrowth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTsSilicon Carbide Nanowire Devices for Label-Free Electrical DNA DetectionHigh Temperature CMOS Circuits on Silicon CarbideSimulations of Interactions between Fast Neutrons and 4H-SiC DetectorsSiC UV Detectors under Heavy Ions IrradiationHigh Voltage Wide Bandgap Photoconductive SwitchingStudy of the Stability of 4H-SiC Detectors by Thermal Neutron IrradiationDevelopment of SiC Power Module and Loss Evaluation in DC-DC Converter Circuit ApplicationFull SiC DCDC-Converter with a Power Density of more than 100kW/dm3Comparison of Turn-Off Strategies for SiC ThyristorsHigh Current (1225A) Optical Triggering of 18-kV 4H-SiC Thyristor in Purely Inductive Load CircuitDesign and Characterization of 500 ?C Schmitt Trigger in 4H-SiCHetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure SensorImproved Planar MOS Barrier Schottky (PMBS) Rectifier with High-k DielectricsECL-Based SiC Logic Circuits for Extreme TemperaturesHigh-Temperature Operation of Electrostatically-Excited Single-Crystalline 4H-SiC Microcantilever ResonatorsPressureless Ag Thin-Film Die-Attach for SiC DevicesNanoscale Dynamic Mechanical Analysis on Heat-Resistant Silsesquioxane Nanocomposite for Power-Device PackagingElectrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current MappingGraphene Ohmic Contacts to n-Type Silicon Carbide (0001)Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC SubstratesRealization and Characterization of Graphene on 4H-SiC for Tera-Hertz TransistorsRHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) SubstratesA Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation TreatmentTuning the Terrace and Step Stability of 6H-SiC (0001) for Graphene Film DepositionRaman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)On the Formation of Graphene by Ge Intercalation of a 4H-SiC SurfaceSi NWs Conversion to Si-SiC Core-Shell NWs by MBEThe Role of Aluminium in the Synthesis of Mesoporous 4H Silicon CarbideSynthesis and Characterization of Al4SiC4: A ?New? Wide Band Gap Semiconductor MaterialSilicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal EffectInfluence of Diamond CVD Growth Conditions and Interlayer Material on Diamond/GaN InterfaceElectrical Properties of Graphene Contacts to AlGaN/GaN HeterostructuresChemical Vapor Deposition of Boron Nitride Thin Films on SiCInnovations in SiC Backside Processing and Manufacturing for GaN/SiC ProductsMicrostructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN HeterostructuresStructural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) EpilayersEffect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT MethodSynchrotron X-Ray Study on Crack Prevention in AlN Crystals Grown on Gradually Decomposing SiC SubstratesNovel Poly-Si/GaN Vertical Heterojunction Diode
