Means and Methods for Measurement and Monitoring

Supplement Book to Advanced Micro-Device Engineering VIII
Erscheinungsjahr 2019
ISBN: 978-3-0357-2553-7
Verlag: Trans Tech Publications

Sonstiges, Englisch, Band Volume 888, 108 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Applied Mechanics and Materials

This special issue is the supplement book to proceedings of the 8th International Conference on Advanced Micro-Device Engineering (AMDE 2016) organized by the Human Resource Cultivation Center, Gunma University, held on 9 December 2016 in Kiryu, Japan. Thematic area of this volume is "Measurement and System technology"

Autoren/Hrsg.

Hanaizumi, Osamu

Fachgebiete

• Technische Wissenschaften Sonstige Technologien | Angewandte Technik Medizintechnik, Biomedizintechnik
• Medizin | Veterinärmedizin Medizin | Public Health | Pharmazie | Zahnmedizin Medizin, Gesundheitswesen Medizintechnik, Biomedizintechnik, Medizinische Werkstoffe
• Technische Wissenschaften Technik Allgemein Mess- und Automatisierungstechnik

Inhaltsverzeichnis

Analysis and Design of Operational Amplifier Stability Using Routh-Hurwitz Stability CriterionEffect of Phase Error in Phase-Shifting InterferometerComparator Synthesis Using Distributed Genetic Algorithm and HSPICE OptimizationRC Polyphase Filter as Complex Analog Hilbert FilterRehabilitation Assistance Using Motion Capture Devices and Virtual Reality FeedbackDetermination of Phase Shift by Digital HolographyNoise Filter for Surface Shape Measurement in Digital HolographyHigh-Frequency Low-Distortion One-Tone and Two-Tone Signal Generation Using Arbitrary Waveform GeneratorMulti-Valued PAM-N Data Transmission Using Double-Rate Tomlinson-Harashima PrecodingA Torque-Sensorless Viscometer for Food Processing ApplicationsEffect of Mass Added to a Force Transducer on the Dynamic-Force Correction MethodAnother Implementation of Efficient Recoding Circuit for Signed Digit to Residue Canonical Signed Digit on Modulo 2n-1Electron Density Measurement Using Multi-Energy X-Rays from a Conventional Laboratory X-Ray SourceA Study on Physically Based Maximum Electric Field Modeling Used for HCI Induced Degradation Characteristic of LDMOS

Über Autor(innen)

Ed. Osamu Hanaizumi