Rapid Thermal Processing and beyond: Applications in Semiconductor Processing

Special topic volume with invited papers only.
Erscheinungsjahr 2008
ISBN: 978-0-87849-391-3
Verlag: Trans Tech Publications

Buch, Englisch, 448 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1000 g

Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging and is still a field ripe for further development.

Autoren/Hrsg.

Lerch, Wielfried

Niess, Jürgen

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Fertigungstechnik

Inhaltsverzeichnis

Dedication III
Dedication 2
Dedication I
Preface
Chapter 1: Historical RTP Review
The Expanding Role of Rapid Thermal Processing in CMOS Manufacturing
Evolution of Commercial RTP Modules
Chapter 2: Wafer Parameter Tuning and Defects
Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing
Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers
High Temperature RTP Application in SOI Manufacturing
Chapter 3: Surface Preparation and Gate Dielectrics
Cleaning of Silicon Surfaces for Nanotechnology
Heavy Water in Gate Stack Processing
Advanced Gate Dielectric Development for VLSI Technology
A Growth Kinetics Model for the Radical Oxidation of Silicon
Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm
High-K: Latest Developments and Perspectives
Production Worthy ALD in Batch Reactors
Chapter 4: USJ Formation and Metrology
Ultra Shallow Depth Profiling with SIMS
Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing
A Light-Induced Annealing of Silicon Implanted Layers
Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing
An Overview of ms Annealing for Deep Sub-Micron Activation
Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals
Modeling and Simulation of Advanced Annealing Processes
Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping
Ultra-Shallow Junction Formation Using Rapid Thermal Processing
Ultra-Rapid Thermal Process for ULSIs
Advanced Millisecond Annealing Technologies and its Applications and Concerns on Advanced Logic LSI Fabrication Processes
Doping Strategies for FinFETs
Chapter 5: Advanced Silicides Formation
RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and pMOS (Ni-Rich Silicide) Gates on HfSiON
Chapter 6: Pattern Effects
A Short History of Pattern Effects in Thermal Processing
Conduction Heating in RTP Fast, and Pattern-Independent
Advanced Annealing Schemes for High-Performance SOI Logic Technologies
Chapter 7: Temperature Measurement
Model Based Measurement in Advanced Rapid Thermal Processing
Chapter 8: Flash Annealing for ULSI and Beyond Si
Short Time Thermal Processing: From Electronics via Photonics to Pipe Organs of the 17th Century