Mertens / Meuris / Heyns | Ultra Clean Processing of Semiconductor Surfaces VIII | Buch | 978-3-908451-46-4 | sack.de

Buch, Englisch, 400 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 800 g

Mertens / Meuris / Heyns

Ultra Clean Processing of Semiconductor Surfaces VIII

Selected, peer reviewed papers from the 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) held in Antwerp, Belgium, September 18-20, 2006

Buch, Englisch, 400 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 800 g

ISBN: 978-3-908451-46-4
Verlag: Trans Tech Publications


Volume is indexed by Thomson Reuters CPCI-S (WoS).This collection of 86 peer-reviewed papers covers all aspects of the use of ultra-clean technology for large-scale integration on semiconductors, and cleaning and contamination-control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.
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Weitere Infos & Material


Acknowledgements
SiO2 removal and drying
Etching of Silicon Dioxide with Gas Phase HF and Water: Initiation, Bulk Etching, and Termination.
Evaluation of the Plasmaless Gaseous Etching Process
Single Wafer Hydrophobic Surface Preparation on 300mm by HF Vapor
Insights into HF-Last Processes and Particle Performance in a Single Wafer Spin Cleaning Tool
Implementing an In Situ Surface Preparation Prior to Ni Deposition for Ni Salicide Processes
Electrical Impact of Various Arsenic-Residues Cleanings
Elimination of Watermark on Extremely High-Doped Poly-Silicon Surfaces Using HF-Vapor Cleaning
Surface chemistry of Si and Ge
Passivation Studies of Germanium Surfaces
Germanium Surface Passivation Using Ozone Gaseous Phase
Surface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)
Surface Microroughness of Silicon in Wet Process and its Minimization
Oxidation of Si Surface Utilizing SCCO2
Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer
Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O3/TEOS CVD
FEOL selective wet etching and corrosion
Etch Rate Profile Characterization of High- Materials
Critical Thickness Threshold in HfO2 Layers
Surface Preparation Challenge on Nitrided Gate Oxides
Development of a New TaN Etchant for Metal Gate
Peracetic Acid as Active Species in Mixtures for Selective Etching of SiGe/Si Layer Systems – Aspects of Chemistry and Analytics
A Wet Etching Technique to Reveal Threading Dislocations in Thin Germanium Layers
Galvanic Corrosion of Stacked Metal Gate Electrodes during Cleaning in HF Solutions
The Dynamic Aspects of Electrochemical Reaction Cells in Selectively Inducing Defects on Silicon Surface
FEOL photo resist removal and substrate loss
Wafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device Fabrication
All-Wet Stripping of FEOL Photoresist Using Mixtures of Sulphuric Acid
All Wet Stripping of Implanted Photoresist
Study of a Metal Gate and Silicon Selective “Dry Ash Only” Process for Combined Extension and Halo Implanted Photo Resist
High Dose Implant Stripping and Residue Removal with Sequential Plasma and Vacuum Aerosol Processes
Confined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line Applications
Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate
I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion
II: Ultra-Shallow Junction Cleaning: Methodologies for Process and Chemistry Optimization
Effect of Dopants on the Dissolution Behavior of Silicon Substrates in HF-Based Cleaning Solutions
The Effect of Various Process Induced Damages on Wet Etching Rate Difference
Particles: removal and damage
How Bubbles (Can) Clean
Aging Phenomena in the Removal of Nano-Particles from Si Wafers
Adhesion and Removal of Silica and Ceria Particles on the Wafer Surfaces in STI and Poly Si CMP
Particle-Substrate Interaction Forces in a Non-Polar Liquid
Interaction Forces between Oxide and Silica-Modified Terpolymer Abrasive and their Impact on CMP and Post-CMP
Particle Deposition and Removal from Ge Wafers
A Study of a Single-Wafer Process in Metal Contact Hole Cleaning
The Active Role of Etch Products in Particle Removal by SC-1 Solutions
New FEOL Cleaning Technology for Advanced Devices beyond 45 nm Node
In Situ Particle Removal Studies Using an Optical Particle Counter
Removal of Nano-Particles by Mixed-Fluid Jet: Evaluation of Cleaning Performance and Comparison with Megasonic
Modeling of Shock Wave Emission during Acoustically-Driven Cavitation-Induced Cleaning Processes
Ex Situ Bubble Generation, Enhancing the Particle Removal Rate for Single Wafer Megasonic Cleaning Processes
New Brush Scrubbing Techniques for a Wafer Bevel, Apex and Edge
Low Si Recess on Cleaning Process by Dilute HF/SC-1 with Megasonic
Preparation, Characterization, and Damage-Free Processing of Advanced Multiple-Gate FETs
Impact of Re-Gasified Water on Megasonic Cleaning
The Removal of Silica Particles from Micron Wide Trenches by Megasonic Cleaning
Is there Gas Entrapped on Submerged Silicon Wafers? Visualizing Nano-Scale Bubbles with Cavitation
Acoustic Field Analysis of a T Type Waveguide in Single Wafer Megasonic Cleaning and its Effect on Particle Removal
Study of the Dynamics of Local Particle Removal Efficiencies Using Localized Haze Maps
Effect of Ozone Supply Methods on PRE in Alkaline Ozone Solutions
Contamination control
Challenges of Single-Wafer Wet Cleaning for Low Temperature Pre-Epitaxial Treatment of SiGe
Estimation of Detrimental Impact of New Metal Candidates in Advanced Microelectronics
Plastic Containers Contamination by Volatile Acids: Accumulation, Release and Transfer to Cu-Surfaces during Wafers Storage
A Study on Germanium as a Contaminant Source in Semiconductor Fabrication Process
Implementation of a System for Metal Contamination Control Based on Classification Criteria
Study of Static Electricity in Wafer Cleaning Process
Metrology
Mapping of Metallic Contamination Using TXRF
Investigation of Metallic Contamination Analysis Using Vapor Phase Decomposition – Droplet Collection – Total Reflection X-Ray Fluorescence (VPD-DC-TXRF) for Pt-Group Elements on Silicon Wafers
X-Ray Spectrometry for Wafer Contamination Analysis and Speciation as Well as for Reference-Free Nanolayer Characterization
Advanced Metrologies for Cleans Characterization: ARXPS, GIXF and NEXAFS
Advanced TXRF Analysis: Background Reduction when Measuring High-k Materials and Mapping Metallic Contamination
Novel Full Wafer Inspection Technology for Non-Visual Residue Defects
Post CMP cleaning
A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing
Effect of an Organic Inhibitor in High pH Chemical Rinse on the Platen for Cu-CMP
The Dependence of Chemical Mechanical Polishing Residue Removal on Post-Cleaning Treatments
A Novel Surface Cleaning for Copper Interconnection Using Ammonium Decomposed Species Generated by Hot Wire
BEOL and Contact cleanning
Improvement of Contact Clean Using Single-Wafer Clean Process for 90nm and Beyond
Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films
Impact of Plasma and Diluted HF on a CoWP Material
Photoresist Characterization and Wet Strip after Low-k Dry Etch
Implications of the Selectiveness of Cu Chelators on Cu0, Cu(I)O and Cu(II)O Powders
Impact of Organic Acid and Gas Bubbling on Copper and Copper Oxide Etch-Rates in Diluted HF Solution
Marangoni Dryer Integrated High Performance Cleaner for Cu/Low k Post Strip Clean for 45nm Technology Node and Beyond
Effect of Pressure Pulsation on Post-Etch Photoresist Stripping on Low-k Films in Supercritical CO2
Optimization of a SC CO2 Post-Etch Cleaning for Copper Interconnections
Study of Resist Strip Chemistries for Ultra Low-k/Cu Interconnect
Effect of Wafer Rotation on Photoresist Stripping in Supercritical CO2
Metal Hard Mask Employed Cu/Low k Film Post Ash and Wet Clean Process Optimization and Integration into 65nm Manufacturing Flow
Mechanism and Principles of Post Etch Al Cleaning with Inorganic Acids
AlCu Metal Line Corrosion: A Case Study
Copper Surface Analysis with ToF-SIMS: Spectra Interpretation and Stability Issues
Influence of the Process Conditions of a Polishing Rinse after CuCMP
Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors


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