Sonstiges, Englisch, 400 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 400 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-908454-30-4
Verlag: Trans Tech Publications
This collection of 86 peer-reviewed papers covers all aspects of the use of ultra-clean technology for large-scale integration on semiconductors, and cleaning and contamination-control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.
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Weitere Infos & Material
Etching of Silicon Dioxide with Gas Phase HF and Water: Initiation, Bulk Etching, and Termination.Evaluation of the Plasmaless Gaseous Etching ProcessSingle Wafer Hydrophobic Surface Preparation on 300mm by HF VaporInsights into HF-Last Processes and Particle Performance in a Single Wafer Spin Cleaning ToolImplementing an In Situ Surface Preparation Prior to Ni Deposition for Ni Salicide ProcessesElectrical Impact of Various Arsenic-Residues Cleanings Elimination of Watermark on Extremely High-Doped Poly-Silicon Surfaces Using HF-Vapor CleaningPassivation Studies of Germanium SurfacesGermanium Surface Passivation Using Ozone Gaseous PhaseSurface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)Surface Microroughness of Silicon in Wet Process and its MinimizationOxidation of Si Surface Utilizing SCCO2Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm WaferEffect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O3/TEOS CVDEtch Rate Profile Characterization of High-? MaterialsCritical Thickness Threshold in HfO2 Layers Surface Preparation Challenge on Nitrided Gate OxidesDevelopment of a New TaN Etchant for Metal GatePeracetic Acid as Active Species in Mixtures for Selective Etching of SiGe/Si Layer Systems ? Aspects of Chemistry and AnalyticsA Wet Etching Technique to Reveal Threading Dislocations in Thin Germanium LayersGalvanic Corrosion of Stacked Metal Gate Electrodes during Cleaning in HF Solutions The Dynamic Aspects of Electrochemical Reaction Cells in Selectively Inducing Defects on Silicon SurfaceWafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device FabricationAll-Wet Stripping of FEOL Photoresist Using Mixtures of Sulphuric AcidAll Wet Stripping of Implanted PhotoresistStudy of a Metal Gate and Silicon Selective ?Dry Ash Only? Process for Combined Extension and Halo Implanted Photo ResistHigh Dose Implant Stripping and Residue Removal with Sequential Plasma and Vacuum Aerosol ProcessesConfined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line ApplicationsImpact of RF Oxygen Plasma on Thermal Oxide Etch-RateI: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate ErosionII: Ultra-Shallow Junction Cleaning: Methodologies for Process and Chemistry Optimization Effect of Dopants on the Dissolution Behavior of Silicon Substrates in HF-Based Cleaning Solutions The Effect of Various Process Induced Damages on Wet Etching Rate Difference How Bubbles (Can) Clean Aging Phenomena in the Removal of Nano-Particles from Si Wafers Adhesion and Removal of Silica and Ceria Particles on the Wafer Surfaces in STI and Poly Si CMP Particle-Substrate Interaction Forces in a Non-Polar Liquid Interaction Forces between Oxide and Silica-Modified Terpolymer Abrasive and their Impact on CMP and Post-CMPParticle Deposition and Removal from Ge WafersA Study of a Single-Wafer Process in Metal Contact Hole CleaningThe Active Role of Etch Products in Particle Removal by SC-1 Solutions New FEOL Cleaning Technology for Advanced Devices beyond 45 nm NodeIn Situ Particle Removal Studies Using an Optical Particle CounterRemoval of Nano-Particles by Mixed-Fluid Jet: Evaluation of Cleaning Performance and Comparison with Megasonic Modeling of Shock Wave Emission during Acoustically-Driven Cavitation-Induced Cleaning ProcessesEx Situ Bubble Generation, Enhancing the Particle Removal Rate for Single Wafer Megasonic Cleaning ProcessesNew Brush Scrubbing Techniques for a Wafer Bevel, Apex and EdgeLow Si Recess on Cleaning Process by Dilute HF/SC-1 with Megasonic Preparation, Characterization, and Damage-Free Processing of Advanced Multiple-Gate FETsImpact of Re-Gasified Water on Megasonic Cleaning The Removal of Silica Particles from Micron Wide Trenches by Megasonic CleaningIs there Gas Entrapped on Submerged Silicon Wafers? Visualizing Nano-Scale Bubbles with Cavitation Acoustic Field Analysis of a T Type Waveguide in Single Wafer Megasonic Cleaning and its Effect on Particle RemovalStudy of the Dynamics of Local Particle Removal Efficiencies Using Localized Haze MapsEffect of Ozone Supply Methods on PRE in Alkaline Ozone SolutionsChallenges of Single-Wafer Wet Cleaning for Low Temperature Pre-Epitaxial Treatment of SiGeEstimation of Detrimental Impact of New Metal Candidates in Advanced MicroelectronicsPlastic Containers Contamination by Volatile Acids: Accumulation, Release and Transfer to Cu-Surfaces during Wafers StorageA Study on Germanium as a Contaminant Source in Semiconductor Fabrication Process Implementation of a System for Metal Contamination Control Based on Classification CriteriaStudy of Static Electricity in Wafer Cleaning ProcessMapping of Metallic Contamination Using TXRFInvestigation of Metallic Contamination Analysis Using Vapor Phase Decomposition ? Droplet Collection ? Total Reflection X-Ray Fluorescence (VPD-DC-TXRF) for Pt-Group Elements on Silicon Wafers X-Ray Spectrometry for Wafer Contamination Analysis and Speciation as Well as for Reference-Free Nanolayer Characterization Advanced Metrologies for Cleans Characterization: ARXPS, GIXF and NEXAFS Advanced TXRF Analysis: Background Reduction when Measuring High-k Materials and Mapping Metallic ContaminationNovel Full Wafer Inspection Technology for Non-Visual Residue Defects A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical PolishingEffect of an Organic Inhibitor in High pH Chemical Rinse on the Platen for Cu-CMPThe Dependence of Chemical Mechanical Polishing Residue Removal on Post-Cleaning Treatments A Novel Surface Cleaning for Copper Interconnection Using Ammonium Decomposed Species Generated by Hot Wire Improvement of Contact Clean Using Single-Wafer Clean Process for 90nm and Beyond Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films Impact of Plasma and Diluted HF on a CoWP MaterialPhotoresist Characterization and Wet Strip after Low-k Dry Etch Implications of the Selectiveness of Cu Chelators on Cu0, Cu(I)O and Cu(II)O Powders Impact of Organic Acid and Gas Bubbling on Copper and Copper Oxide Etch-Rates in Diluted HF SolutionMarangoni Dryer Integrated High Performance Cleaner for Cu/Low k Post Strip Clean for 45nm Technology Node and BeyondEffect of Pressure Pulsation on Post-Etch Photoresist Stripping on Low-k Films in Supercritical CO2Optimization of a SC CO2 Post-Etch Cleaning for Copper InterconnectionsStudy of Resist Strip Chemistries for Ultra Low-k/Cu InterconnectEffect of Wafer Rotation on Photoresist Stripping in Supercritical CO2Metal Hard Mask Employed Cu/Low k Film Post Ash and Wet Clean Process Optimization and Integration into 65nm Manufacturing FlowMechanism and Principles of Post Etch Al Cleaning with Inorganic AcidsAlCu Metal Line Corrosion: A Case Study Copper Surface Analysis with ToF-SIMS: Spectra Interpretation and Stability IssuesInfluence of the Process Conditions of a Polishing Rinse after CuCMPWet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors
