Ultra Clean Processing of Semiconductor Surfaces X

Erscheinungsjahr 2012
ISBN: 978-3-03785-388-7
Verlag: Trans Tech Publications

Buch, Englisch, 356 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 800 g

The International Symposium on Ultra-Clean Processing of Semiconductor Surfaces (UCPSS) is a bi-annual conference which has been organized by IMEC since 1992. Volume is indexed by Thomson Reuters CPCI-S (WoS).The scope of the symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrated Circuit manufacture. At first, silicon was typically the main semiconductor of interest. As other semiconducting materials such as SiGe, SiC, Ge and III-V compounds came under consideration for future devices, the scope was broadened so as to include these materials. Parallelling the fast-moving CMOS industry, the photovoltaic industry has also recognized the need to make improvements in cleaning. Moreover, in order to promote these semiconductor cleaning activities in PV, it was decided to add a special session focused on this topic.

Autoren/Hrsg.

Mertens, Paul

Meuris, Marc

Heyns, Marc

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik

Inhaltsverzeichnis

Preface, Committees and Sponsors
Keynote
Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface
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Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers
Cleaning and Surface Preparation for SiGe and Ge Channel Device
S-Passivation of the Ge Gate Stack Using (NH4)2S
Wet Chemical Cleaning of InP and InGaAs
Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique
Effect of Wet Cleanings on GST Surface: XPS Characterization
Study of the Etching Mechanism of Heavily Doped Si in HF
Study on Al2O3 Film in Anhydrous HF Vapor
Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory
Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate
A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
Chapter 2: FEOL: Cleaning- and Drying-Induced Defects: Charging, Collapse of Fragile High Aspect Ratio Structures
Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process
Surface Charging Induced Gate Oxide Degradation
Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity
Effect of Drying Liquid on Stiction of High Aspect Ratio Structures
Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning System
Chapter 3: FEOL: Photo Resist Removal
Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray
High Temperature SPM Process Study for Stripping of Implanted Photoresist
Study of Controlled Oxygen Diffusion Approaches for Advanced Photoresist Strip
Non-Oxidizing Solvent-Based Strip of Ion Implanted Photoresist
All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip
Applicable Solvent Photoresist Strip Process for High-K/Metal Gate
Study on Resist Removal Using Electrolyzed Sulfuric Acid Solution in Comparison with SPM
Using the Background Signal of a Light Scattering Tool for I/I Photo Resist Strip Optimization and Monitoring
Wafer Edge Bead Cleaning with Laser Radiation and Reactive Gas
Chapter 4: Mechanical Cleaning Forces: Metrology
Effects of Interfacial Strength and Dimension of Structures on Physical Cleaning Window
The Influence of Liquid Media on the Fracture Strength of Polysilicon Nanostructures
Comparisons of Various Physical Cleaning
Chapter 5: Chemical Mechanical Cleaning: Liquid Aerosol Cleaning
Effects of Target Compliance on a High-Speed Droplet Impact
Order Estimation of Physical Processes in Dynamics of Steam-Water Mixed Spray Cleaning Technique
Thermomechanical Resist Removal-Cleaning System Using Cryogenic Micro-Slush Jet
Uniformity of Particle Removal by Aerosol Spray
Development of a Novel Advanced Spray Technology Based on Investigation of Droplet Energy and Pattern Damage
Chapter 6: Chemical Mechanical Cleaning: Megasonic Cleaning
Comparison of Gold Particle Removal from Fused Silica and Thermal Oxide Surfaces in Dilute Ammonium Hydroxide Solutions
The Influence of the Angle of Incidence in Megasonic Cleaning
Simultaneous Removal of Particles from Front and Back Sides by a Single Wafer Backside Megasonic System
The Importance of Cavitation Hysteresis in Megasonic Cleaning
Control of Sonoluminescence in Carbon Dioxide Containing Di Water at near Neutral pH Conditions
Development of a Megasonic System for Cleaning Flat Panel Display
Stroboscopic Schlieren Study of Bubble Formation during Megasonic Agitation
Chapter 7: Back-End-of-Line Cleaning
Low-k Integration Using Metallic Hard Masks
Characterization of Low-k Dielectric Etch Residue on the Sidewall by Chemical Force Microscope
Optimized Wetting Behavior of Water-Based Cleaning Solutions for Plasma Etch Residue Removal by Application of Surfactants
Modification of Post-Etch Residues by UV for Wet Removal
"Damage Free" Cleaning for Advanced BEOL Interconnections
A Descum Review for Cleaning Surfaces in Polymer Embedded Process Flows
Influence of Photoresist and BARC Selection on the Efficiency of a Post-Etch Wet Strip in BEOL Applications
ESH Friendly Solvent for Stripping Positive and Negative Photoresists in 3D-Wafer Level Packaging and 3D-Stacked IC Applications
Tungsten Oxidation Kinetic after Wet Cleaning: XPS and ToF-SIMS Characterization
A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces
Electrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP Clean
TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme
Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide)
Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low- Technologies
Wet Clean Induce Pattern Collapse Mechanism Study
Chapter 8: Cleaning for 3D Applications
Ultra-Fast In-Line Inspection for 3D SIC TSV Line - Bonding & Thinning
Cleaning Requirement in the Thinning Module for 3D-Stacked IC (3D-SIC) Integration
High Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration Applications
Chapter 9: Contamination Control: Metallic and Organic Contamination
Indirect Ultra-Pure Water Metals Analysis by Extended Ion Exchange on a Silica Surface
Production of High Purity Functional Water at Point-of-Use for Advanced Mask Cleaning Processes
Gettering Behavior of Transition Metals in Low Energy, High Dose Ion Implanted Silicon
Yield Impact of Backside Metal-Ion Contamination
Reliable Quantification of Inorganic Contamination by TXRF
Reference Samples for Ultra Trace Analysis of Organic Compounds on Substrate Surfaces
Assessment of a FOUP Conditioning Equipment for Advanced Semiconductor Application
Concentration of Three Organic Compounds Influencing each other on Silicon Surface
Environmentally Benign In-Line Cleaning Solutions for Immersion Lithography Tools
Chapter 10: Wet Processing and Cleaning for Silicon Photo-Voltaic Applications
Photovoltaics: The Renewable Energy Revolution Leading the Semiconductor Industry
Ozone Based Chemical Oxide Growth for Crystalline Solar Cell Production
Simple Wet-Chemical Cleanings for High-Efficiency Silicon Solar Cell Applications
Novel Texture Etch Chemistry for Transparent Conducting Oxides Used in Photovoltaic Cells
Advanced Texturization of Mc-Si Solar Cells
Surface Contamination of Silicon Wafer after Acidic Texturisation
Optimization of Post-Texturization Cleans for Heterojunction Solar Cells
HF Last Passivation for High Efficiency a-Si/c-Si Heterojunction Solar Cells
Wet-Chemical Preparation of Textured Silicon Solar Cell Substrates: Surface Conditioning and Electronic Interface Properties
Two-In-One Texturing and Polishing in One Solution
Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3