Sonstiges, Englisch, Band Volume 187, 356 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Solid State Phenomena
Sonstiges, Englisch, Band Volume 187, 356 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Solid State Phenomena
ISBN: 978-3-03795-210-8
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The scope of the symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrated Circuit manufacture. At first, silicon was typically the main semiconductor of interest. As other semiconducting materials such as SiGe, SiC, Ge and III-V compounds came under consideration for future devices, the scope was broadened so as to include these materials. Parallelling the fast-moving CMOS industry, the photovoltaic industry has also recognized the need to make improvements in cleaning. Moreover, in order to promote these semiconductor cleaning activities in PV, it was decided to add a special session focused on this topic.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik
- Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
Weitere Infos & Material
Exploratory Materials and Devices to Advance CMOS beyond the Classical Si RoadmapScanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor SurfaceOptimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed BuffersCleaning and Surface Preparation for SiGe and Ge Channel DeviceS-Passivation of the Ge Gate Stack Using (NH4)2SWet Chemical Cleaning of InP and InGaAsAchieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing TechniqueEffect of Wet Cleanings on GST Surface: XPS CharacterizationStudy of the Etching Mechanism of Heavily Doped Si in HFStudy on Al2O3 Film in Anhydrous HF VaporDeposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash MemoryPoly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal RateA Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate SchemeStatic Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning ProcessSurface Charging Induced Gate Oxide DegradationInvestigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide IntegrityEffect of Drying Liquid on Stiction of High Aspect Ratio StructuresElucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning SystemMeasurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed SprayHigh Temperature SPM Process Study for Stripping of Implanted PhotoresistStudy of Controlled Oxygen Diffusion Approaches for Advanced Photoresist StripNon-Oxidizing Solvent-Based Strip of Ion Implanted PhotoresistAll-Wet, Metal-Compatible High-Dose-Implanted Photoresist StripApplicable Solvent Photoresist Strip Process for High-K/Metal GateStudy on Resist Removal Using Electrolyzed Sulfuric Acid Solution in Comparison with SPMUsing the Background Signal of a Light Scattering Tool for I/I Photo Resist Strip Optimization and MonitoringWafer Edge Bead Cleaning with Laser Radiation and Reactive GasEffects of Interfacial Strength and Dimension of Structures on Physical Cleaning WindowThe Influence of Liquid Media on the Fracture Strength of Polysilicon NanostructuresComparisons of Various Physical CleaningEffects of Target Compliance on a High-Speed Droplet ImpactOrder Estimation of Physical Processes in Dynamics of Steam-Water Mixed Spray Cleaning TechniqueThermomechanical Resist Removal-Cleaning System Using Cryogenic Micro-Slush JetUniformity of Particle Removal by Aerosol SprayDevelopment of a Novel Advanced Spray Technology Based on Investigation of Droplet Energy and Pattern DamageComparison of Gold Particle Removal from Fused Silica and Thermal Oxide Surfaces in Dilute Ammonium Hydroxide SolutionsThe Influence of the Angle of Incidence in Megasonic CleaningSimultaneous Removal of Particles from Front and Back Sides by a Single Wafer Backside Megasonic SystemThe Importance of Cavitation Hysteresis in Megasonic CleaningControl of Sonoluminescence in Carbon Dioxide Containing Di Water at near Neutral pH ConditionsDevelopment of a Megasonic System for Cleaning Flat Panel DisplayStroboscopic Schlieren Study of Bubble Formation during Megasonic AgitationLow-k Integration Using Metallic Hard MasksCharacterization of Low-k Dielectric Etch Residue on the Sidewall by Chemical Force MicroscopeOptimized Wetting Behavior of Water-Based Cleaning Solutions for Plasma Etch Residue Removal by Application of SurfactantsModification of Post-Etch Residues by UV for Wet Removal"Damage Free" Cleaning for Advanced BEOL InterconnectionsA Descum Review for Cleaning Surfaces in Polymer Embedded Process FlowsInfluence of Photoresist and BARC Selection on the Efficiency of a Post-Etch Wet Strip in BEOL ApplicationsESH Friendly Solvent for Stripping Positive and Negative Photoresists in 3D-Wafer Level Packaging and 3D-Stacked IC ApplicationsTungsten Oxidation Kinetic after Wet Cleaning: XPS and ToF-SIMS CharacterizationA Comparison between BTA and Amidoximes and their Interactions with Copper SurfacesElectrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP CleanTiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding SchemeImproved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide)Aqueous Fluoride Residue Removers for 32 nm and beyond Copper Ultra Low-? TechnologiesWet Clean Induce Pattern Collapse Mechanism StudyUltra-Fast In-Line Inspection for 3D SIC TSV Line - Bonding & ThinningCleaning Requirement in the Thinning Module for 3D-Stacked IC (3D-SIC) IntegrationHigh Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration ApplicationsIndirect Ultra-Pure Water Metals Analysis by Extended Ion Exchange on a Silica SurfaceProduction of High Purity Functional Water at Point-of-Use for Advanced Mask Cleaning ProcessesGettering Behavior of Transition Metals in Low Energy, High Dose Ion Implanted SiliconYield Impact of Backside Metal-Ion ContaminationReliable Quantification of Inorganic Contamination by TXRFReference Samples for Ultra Trace Analysis of Organic Compounds on Substrate SurfacesAssessment of a FOUP Conditioning Equipment for Advanced Semiconductor ApplicationConcentration of Three Organic Compounds Influencing each other on Silicon SurfaceEnvironmentally Benign In-Line Cleaning Solutions for Immersion Lithography ToolsPhotovoltaics: The Renewable Energy Revolution Leading the Semiconductor IndustryOzone Based Chemical Oxide Growth for Crystalline Solar Cell ProductionSimple Wet-Chemical Cleanings for High-Efficiency Silicon Solar Cell ApplicationsNovel Texture Etch Chemistry for Transparent Conducting Oxides Used in Photovoltaic CellsAdvanced Texturization of Mc-Si Solar CellsSurface Contamination of Silicon Wafer after Acidic TexturisationOptimization of Post-Texturization Cleans for Heterojunction Solar CellsHF Last Passivation for High Efficiency a-Si/c-Si Heterojunction Solar CellsWet-Chemical Preparation of Textured Silicon Solar Cell Substrates: Surface Conditioning and Electronic Interface PropertiesTwo-In-One Texturing and Polishing in One SolutionSurface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3
