Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices

Erscheinungsjahr 2011
ISBN: 978-3-03785-178-4
Verlag: Trans Tech Publications

Buch, Englisch, 200 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 500 g

This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.Volume is indexed by Thomson Reuters CPCI-S (WoS).

Autoren/Hrsg.

Nazarov, Alexei N.

Raskin, Jean Pierre

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Preface and Committee Members
I. Technology of Semiconductor-On-Insulator Structures and Devices
ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications
Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures
Diamond – Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing
Hydrogen Gettering within Processed Oxygen-Implanted Silicon
II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs
Effects of High–Energy Neutrons on Advanced SOI MOSFETs
III. SOI Sensors and MEMS
Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams
Non-Standard FinFET Devices for Small Volume Sample Sensors
3D SOI Elements for System-on-Chip Applications
Routes towards Novel Active Pressure Sensors in SOI Technology
IV. Nanodots, Nanowires and Nanofilms
Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers
Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon
Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures
A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures
The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors