Nazarov / Raskin | Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices | Sonstiges | 978-3-03795-003-6 | sack.de

Sonstiges, Englisch, 200 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Nazarov / Raskin

Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices


Sonstiges, Englisch, 200 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

ISBN: 978-3-03795-003-6
Verlag: Trans Tech Publications

This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
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Autoren/Hrsg.

Nazarov, Alexei N.
Raskin, Jean Pierre

Fachgebiete

Weitere Infos & Material

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and ApplicationsInfluence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si StructuresDiamond ? Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and AnnealingHydrogen Gettering within Processed Oxygen-Implanted SiliconGate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional ChannelsModel of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETsHigh Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETsSome Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel StructuresElectrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETsEffects of High?Energy Neutrons on Advanced SOI MOSFETsPolysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing BeamsNon-Standard FinFET Devices for Small Volume Sample Sensors3D SOI Elements for System-on-Chip ApplicationsRoutes towards Novel Active Pressure Sensors in SOI TechnologyPhotovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX LayersInterface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si StructuresA Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High TemperaturesThe Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors

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