Sonstiges, Englisch, Band Volumes 778-780, 1246 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
Sonstiges, Englisch, Band Volumes 778-780, 1246 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
ISBN: 978-3-03795-705-9
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 283 papers are grouped as follows:
Chapter 1: SiC Bulk Growth;
Chapter 2: SiC Epitaxial Growth;
Chapter 3: Physical Properties and Characterization of SiC;
Chapter 4: Processing of SiC;
Chapter 5: Devices and Circuits;
Chapter 6: Related Materials.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Open Issues in SiC Bulk GrowthReal-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed TomographyEffect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded SublimationDevelopment of RAF Quality 150mm 4H-SiC WaferImpurity Behavior of High Purity SiC Powder during SiC Crystal GrowthEffect of TaC-Coated Crucible on SiC Single Crystal GrowthInteraction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVTSpiral Step Dissociation on PVT Grown SiC CrystalsReciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-AxisGrowth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique4H-SiC Bulk Growth Using High-Temperature Gas Source MethodFast 4H-SiC Crystal Growth by High-Temperature Gas Source MethodDislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source MethodIncrease in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiCSurface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si SolventElectromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling ApproachSolution Growth of p-Type 4H-SiC Bulk Crystals with Low ResistivityTop-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsEvolution of Fast 4H-SiC CVD Growth and Defect Reduction TechniquesDemonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation DensityEffects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET ApplicationsConversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-AngleProgress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High ThroughputLatest SiC Epitaxial Layer Growth Results in a High-Throughput 6?150 mm Warm-Wall Planetary ReactorFast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled SubstrateHomo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC SubstrateEpitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBTDependence of the Growth Parameters on the In-Plane Distribution of 150 mm f Size SiC Epitaxial WaferComparative Study of Defects in 4H-SiC Epilayers Grown on 4o Off-Axis (0001) and (000-1) SubstratesAn Approach to Trace Defects Propagation during SiC EpitaxyCharacterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC EpilayersCrystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas SupplyEffect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4? Off-Axis Substrates50 ?m-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary ReactorDemonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth MethodSimulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm SubstratesRevisiting the Thermochemical Database of Si-C-H System Related to SiC CVD ModelingFast Growth Rate Epitaxy on 4? Off-Cut 4-Inch Diameter 4H-SiC WafersSimulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster EffectGe Assisted SiC Epitaxial Growth by CVD on SiC Substrate4H-SiC Epitaxial Growth on C-Face 150 mm SiC SubstrateStudy of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial GrowthFirst-Principles Study of Nanofacet Formation on 4H-SiC(0001) SurfaceImproved Epilayer Surface Morphology on 2? Off-Cut 4H-SiC SubstratesHCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar DevicesHomo-Epitaxial Growth on 2? Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD SystemSimulations of SiC CVD - Perspectives on the Need for Surface Reaction Model ImprovementsSimulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial LayerHeteroepitaxial CVD Growth of 3C-SiC on Diamond SubstrateThe Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC3C-SiC Seeded Growth on Diamond Substrate by VLS TransportMonte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic SubstratesOptical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas AtmosphereA Study of the Intermediate Layer in 3C-SiC/6H-SiC HeterostructuresFormation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si SubstratesCurvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor DepositionCharacterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor DepositionPersistent Conductivity in n-Type 3C-SiC Observed at Low TemperaturesMinority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiCAnnealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100?C and 1500?C and Measurements of Lifetime and PhotoluminescenceIdentification of Structures of the Deep Levels in 4H-SiCOxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTSIdentification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical CalculationsDefect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient SpectroscopyCorrelation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiCDiffusion of Alkali Metals in SiCComparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and ?-PCDOn Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC SubstratesBasal Plane Dislocations from Inclusions in 4H-SiC EpitaxyPhotoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC EpilayersPolarized Photoluminescence from Partial Dislocations in 4H-SiCPost-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC EpilayersMeasurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray TopographyStudy of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC EpilayerThree-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic GenerationDriving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence ImagingDislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit MethodTEM Observation of Defect Structure of Low-Energy Ion Implanted SiCStructure and Origin of Carrot Defects on 4H-SiC Homoepitaxial LayersDislocation Analysis of 4H-SiC Using KOH Low Temperature EtchingCharacterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC CrystalCharacterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron MicroscopyMicrostructural Analysis of Damaged Layer Introduced during Chemo-Mechanical PolishingOrigin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray TopographyMicro-Raman Characterization of 4H-SiC Stacking FaultsDefects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial LayersCharacterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon CarbideFormation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) SubstrateNanomechanical Analysis of Triangular Defect in 4H-SiC EpilayerAnalysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray TopographyNon Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron MicroscopyNanoscale Characterization of SiC Interfaces and DevicesC-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic ResonanceAccurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel MobilityDeep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band EdgeLow Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect TransistorsEstimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various ProcessesDrain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect TransistorsSingle Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide ThicknessesMechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS StructuresInfluence of P+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC WafersResidual Stress Measurements of 4H-SiC Crystals Using X-Ray DiffractionEvaluation of Mechanical and Optical Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared-MembraneTemperature Dependence of Impact Ionization Coefficients in 4H-SiCImproved Analytical Expressions for Avalanche Breakdown in 4H-SiCHigh-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28Si12C, Natural and 13C ? Enriched 4H-SiCCarrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiCCrystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction MethodsHall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETsTemperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiCHigh-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz WavesTheoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiCFirst Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit ApplicationImpact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiCDirect Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron MicroscopyThin PSG Process for 4H-SiC MOSFETDepletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiCThreshold Voltage Instability of SiC-MOSFETs on Various Crystal FacesLow Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide StabilityUnexpected Effect of Thermal Storage Observed on SiC Power DMOSFETRadiation-Induced Trapped Charging Effects in SiC Power MOSFETsReliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate OxideDegradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen AnnealingReliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP TreatmentCharacterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS CapacitorSi Emission into the Oxide Layer during Oxidation of Silicon CarbideHigh Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial OxidationNano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band BendingMOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFETReduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus ImplantationConduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiCSystematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETsExperimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted PolishingRapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiCInfluence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS StructuresImpact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS CapacitorsDeep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400?CStep-Bunching Dependence of the Lifetime of MOS Capacitor on 4o Off-Axis Si-Face 4H-SiC Epitaxial WafersNitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETsNF3 Added Oxidation of 4H-SiC(0001) and Suppression of Interface DegradationCharacterization of SiO2/SiC Interfaces Annealed in N2O or POCl3Growth of Gate Oxides on 4H-SiC by NO at Low Partial PressuresPreparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma NitridationAnalysis of C-Face 4H-SiC MOS Capacitors with ZrO2 Gate DielectricApplications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contactsn- and p-Type Doping of 4H-SiC by Wet-Chemical Laser ProcessingProperties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon InterlayerMicrowave Annealing of Al+ Implanted 4H-SiC: Towards Device FabricationAl+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect ActivationTemperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon CarbideComparative Study of the Current Transport Mechanisms in Ni2Si Ohmic Contacts on n- and p-Type Implanted 4H-SiCTi/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiCDevelopment of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite MaterialsLow Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device FabricationCharacterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40?C to 500?CElectrical Properties of Mg-Implanted 4H-SiCLow Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiCOn the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic ContactsMicrostructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDSEffect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect TransistorsElectrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiCImpact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier DiodesJunction Formation via Direct Bonding of Si and 6H-SiCI - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures4H-SiC Planarization Using Catalyst-Referred Etching with Pure WaterInvestigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching ProcessHydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa StructuresOff-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride GasDevelopment of Silicon Carbide Dry Etcher Using Chlorine Trifluoride GasInvestigation of Trenched and High Temperature Annealed 4H-SiCRemoval of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOHThinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit ElectrodeA Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic AbrasivesDicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma ConfinementMulti-Wire Electrical Discharge Slicing for Silicon Carbide Part 2: Improvement on Manufacturing Wafers by Forty-Wire EDSEffects of Machining Fluid on Electric Discharge Machining of SiC IngotHigh-Speed Slicing of SiC Ingot by High-Speed Multi Wire SawDevelopment of Multi-Wire Electric Discharge Machining for SiC Wafer ProcessingFabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical EtchingCharacteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge MachiningDesigning and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBDStudy of 4H-SiC Schottky Diode Designs for 3.3kV ApplicationsSimulation, Fabrication and Characterization of 4500V 4H-SiC JBS DiodeEvaluation of Buried Grid JBS DiodesHigh Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching StepThe Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)Temperature and dIDS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching ApplicationsProperties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension AnalysisInvestigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device SimulationUltrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal OxidationFabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiCHigh Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN DiodeDevelopment of SiC Super-Junction (SJ) Devices by Multi-Epitaxial GrowthVF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers13-kV, 20-A 4H-SiC PiN Diodes for Power System ApplicationsVariant of Excess Current in 4H-SiC pn StructuresThe Cryogenic Testing and Characterisation of SiC DiodesComparison of 5kV SiC JBS and PiN Diodes650V SiC JFET for High Efficiency ApplicationsGate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power SupplyEvaluation of SiC Stack Cascode for 200?C OperationsBeam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET PackageThe Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical StudyMonolithic Integration of Power MESFET for High Temperature SiC Integrated CircuitsSiC Current Limiting FETs (CLFs) for DC Applications3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225?C OperationA Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance40mO / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching ApplicationsBlocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination4H-SiC Trench MOSFET with Bottom Oxide ProtectionSiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction DiodeSiC Epi-Channel Lateral MOSFETs600 V -Class V-Groove SiC MOSFETs14.6 mOcm2 3.3 kV DIMOSFET on 4H-SiC (000-1)1200 V 4H-SiC DMOSFET with an Integrated Gate BufferDesigning of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETsUtilization of SiC MOSFET Body Diode in Hard Switching ApplicationsDevelopment of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body DiodeHigh Temperature Reliability of the SiC-MOSFET with Copper MetallizationImpact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETsInvestigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFETReliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion ApplicationsComparison of 600V Si, SiC and GaN Power DevicesImprovement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-OxidationElectrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial FilmsNovel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFETComparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide and Deposit Oxide with Post Oxidation AnnealCharacterization of SiO2/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFETSelection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETsRapidly Maturing SiC Junction Transistors Featuring Current Gain (?) > 130, Blocking Voltages up to 2700 V and Stable Long-Term OperationSiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTsModeling of High Performance 4H-SiC Emitter Coupled Logic CircuitsCharacterization of 4H-SiC Bipolar Junction Transistor at High TemperaturesStability of Current Gain in SiC BJTsOptical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC ThyristorStatic and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker20 kV 4H-SiC N-IGBTsOn the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTsEffect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTsRadiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate MonitoringNuclear Radiation Detectors Based on 4H-SiC p+-n JunctionOptical and Electrical Simulations of Solar Cell Based on Silicon and Silicon CarbideHigh Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor StructureDiscriminating High k Dielectric Gas SensorsTwo Packaging Solutions for High Temperature SiC Diode SensorsSilicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic CompoundsHigh Speed Rail Awaits the next Breakthrough of Power SemiconductorsProgress in High Voltage SiC and GaN Power Switching DevicesHigh-Efficiency Power Conversion Using Silicon Carbide Power ElectronicsStrategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy SavingsSiC Power Module for Compact Power Conversion EquipmentInverter-Rectifier Using SiC Power Devices for Bidirectional Wireless Power Transfer System of Electric VehiclesSiC Power Devices as Enabler for High Power Density - Aspects and ProspectsHigh Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-ElectroplatingResearch of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power DevicesPressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device PackagesSiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power DevicesSilicon Carbide Transistors for IC Design Applications up to 600 ?CHigh Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic GatesControlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet IlluminationElectrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky ContactsCarrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiCStability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiCFormation of Graphene onto Atomically Flat 6H-SiCSolid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation MechanismsBackside Monitoring of Graphene on Silicon Carbide by Raman SpectroscopyIon-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator SubstratesCommercialization of High 600V GaN-on-Silicon Power DevicesMagnetoresistance of AlGaN/GaN High Electron Mobility Transistors on SiliconEvidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning CalorimetryA Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaNPlanarization of the Gallium Nitride Substrate Grown by the Na Flux Method Applying Catalyst-Referred EtchingEvaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETsStructural Analysis of ZnO Thin Films Grown in Room Temperature on PET Film
