ECSCRM 2008
Buch, Englisch, 1030 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 2300 g
ISBN: 978-0-87849-334-0
Verlag: Trans Tech Publications
Autoren/Hrsg.
Weitere Infos & Material
Preface
Committees
Sponsor
Overview
Chapter 1: SiC Bulk Growth
1.1. Hexagonal SiC
Defect Status in SiC Manufacturing
Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
1.2 3C-SiC
Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
Top Seeded Solution Growth of 3C-SiC Single Crystals
Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
Chapter 2: SiC Epitaxy
2.1 Homoepitaxial Growth
Thick Epitaxial Layers Growth by Chlorine Addition
Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV
Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
Chloride-Based SiC Epitaxial Growth
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth
Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
Inverted Pyramid Defects in 4H-SiC Epilayers
PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer
On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
2.2 Heteroepitaxial Growth
High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)
Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios
Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer
Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls
P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide
Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
Chapter 3: SiC Nanostructures and Graphene
Growth of Graphene Layers on Silicon Carbide
Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
TEM Investigations of Graphene on 4H-SiC(0001)
Graphene Formation on SiC Substrates
AFM and Raman Studies of Graphene Exfoliated on SiC
Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)
Investigation of Graphene Growth on 4H-SiC
Formation of Different Carbon Phases on SiC
Study of the Electrical Characteristics of the CNT/SiC Interface
Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
Textile Solar Cells Based on SiC Microwires
Chapter 4: SiC Characterization
4.1.Wafer Mapping and Characterization Techniques
Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Dist
