Sonstiges, Englisch, 1030 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1030 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-908454-16-8
Verlag: Trans Tech Publications
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.
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Defect Status in SiC ManufacturingInitial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) MethodGermanium Incorporation during PVT Bulk Growth of Silicon CarbideGrowth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT MethodCharacterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray DiffractionPolytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method Nucleation and Growth of 3C-SiC Single Crystals from the Vapor PhaseHigh Temperature Solution Growth on Free-Standing (001) 3C-SiC EpilayersTop Seeded Solution Growth of 3C-SiC Single CrystalsNitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVTAdvances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiCThick Epitaxial Layers Growth by Chlorine AdditionBasal Plane Dislocation Mitigation in 8? Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor DepositionFast Epitaxial Growth of 4H-SiC and Analysis of Defect TransferAtomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiCLarge-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kVGrowth of 4H-SiC Epitaxial Layers on 4? Off-Axis Si-Face SubstratesP- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped SubstratesChloride-Based SiC Epitaxial GrowthGrowth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl AdditionLow-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based GrowthUniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC WafersTurning of Basal Plane Dislocations during Epitaxial Growth on 4? Off-Axis 4H-SiCThe Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer QualityControl of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal GrowthExtended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiCDislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial GrowthInverted Pyramid Defects in 4H-SiC EpilayersPL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial LayerOn-Axis Homoepitaxy on Full 2? 4H-SiC Wafer for High Power ApplicationsLiquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown SubstratesLPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device ApplicationHigh Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)SiA Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si RatiosGrowth of Single Crystal 3C-SiC(111) on a Poly-Si Seed LayerLow Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVDP-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on SiliconSilicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold WallsP-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC SubstratesStructural Properties of 3C-SiC Grown by Sublimation EpitaxySearching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC SubstratesTwo-Dimensional Nucleation of Cubic and 6H Silicon CarbideEffects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid PhaseGrowth of Graphene Layers on Silicon CarbideGrowth of Few Graphene Layers on 6H, 4H and 3C-SiC SubstratesTEM Investigations of Graphene on 4H-SiC(0001)Graphene Formation on SiC SubstratesAFM and Raman Studies of Graphene Exfoliated on SiCStructural and Electronic Properties of Epitaxial Graphene on SiC (0001)Investigation of Graphene Growth on 4H-SiCFormation of Different Carbon Phases on SiCStudy of the Electrical Characteristics of the CNT/SiC InterfaceEffect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V CharacteristicsTextile Solar Cells Based on SiC MicrowiresSpatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence MappingCharacterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional TopographyInfluence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime MappingPhotoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping InhomogeneityTemperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiCLaser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power DiodesDislocation-Induced Birefringence in Silicon CarbideTwo Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC SubstratesAn Effective Method of Characterization of SiC SubstratesCarrier Generation Lifetime in 4H-SiC Epitaxial WafersWafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial WafersLong Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated PrecursorsMinority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity DecayDirect Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in TransistorsOptical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC CrystalsFeatures of Hot Hole Transport in 6?-SiCTemperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC PhotodiodesAccurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon CarbideInvestigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating TechniqueMicrohardness of 6H- and 4H-SiC SubstratesElectrical and Mechanical Properties of Post-Annealed SiCxNy FilmsA TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during GrowthInvestigation of the Metal?Insulator Transition in n-3C-SiC Epitaxial Films8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?Spin-Coupling in Heavily Nitrogen-Doped 4H-SiCThe Silicon Vacancy in SiCPulsed EPR Studies of the Tv2a Center in 4H-SiCSiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiCIdentification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiCDeep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiCThe Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiCDefects in 4H-SiC Layers Grown by Chloride-Based EpitaxyDefects Introduced by Electron-Irradiation at Low Temperatures in SiCCharacterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient SpectroscopyDetermination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient SpectroscopyCapacitance Spectroscopy Study of Midgap Levels in n-Type SiC PolytypesInfluence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTSDefects in High Energy Ion Irradiated 4H-SiCPhoto-EPR Studies on Low-Energy Electron-Irradiated 4H-SiCOptical Identification of Mo Related Deep Level Defect in 4H and 6H SiCAnti-Site Defects are Found at Large Distances from Localised H and He Ion ImplantationsUse of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by AnnealingNanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters MappingSurface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4? Off-Axis 4H-SiC WafersInterface States and Barrier Heights on Metal/4H-SiC InterfacesAnalysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky BarriersCrystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast ImagingRole of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical ApproachInvestigation of Si/4H-SiC Hetero-Junction Growth and Electrical PropertiesSimulation of Ion Implantation in SiC: Dopant Profiling and ActivationTwo-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiCElectrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance MicroscopyMicrostructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation TreatmentsSIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC DiodesFar-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al IonsFormation of Extended Defects in 4H-SiC Induced by Ion Implantation/AnnealingDiffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence ObservationStructural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiCModel Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission ModelAtomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon CarbideInterface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current TechniqueCharacterization of the SiO2/SiC Interface with Impedance SpectroscopyCharacterization of 4H-SiC?SiO2 Interfaces by a Deep Ultraviolet Spectroscopic EllipsometerObservation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry4H-SiC Oxide Characterization with SIMS Using a 13C TracerTransient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion IncidenceElectrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NOImpact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC InterfacesOxidation Process of SiC by RTP TechniqueAnalysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted LayerEffect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRCAlON/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS DevicesEffect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO2 on 4H-SiCImpact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-FaceReliability of Large-Area Gate Oxide on the C-Face of 4H-SiCReliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O NitridationHigh-Temperature Reliable Ni2Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN BarrierHeat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaNNano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiCOn the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiCPhase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiCAluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiCProcess Optimization for High Temperature SiC Lateral DevicesA Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal OrientationsHCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC SurfacesComparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC WafersElectrochemical Polishing of p-Type 4H SiCThe Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiCSpectroscopic Measurement of Electric Discharge Machining for Silicon CarbideSiC Power Devices: Product Improvement Using Diffusion SolderingSiC Freestanding Micromechanical Structures on Silicon-On-Insulator SubstratesPerformance Modification of SiC MEMSSingle Crystal and Polycrystalline 3C-SiC for MEMS ApplicationsResidual Stress Measurement on Hetero-Epitaxial 3C-SiC Films3C-SiC Films on Si for MEMS Applications: Mechanical PropertiesBottom-Up Routes to Porous Silicon CarbideInfluence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based ContactsFabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiCDoping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability ImprovementPost Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC DiodeThe Impact of Schottky Barrier Tunneling on SiC-JBS PerformanceCharacterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature AnalysesAvalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-LayerDoping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion ImplantationVoltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiCCharacterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFETGrayscale Junction Termination for High-Voltage SiC DevicesPolyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown VoltageLifetime Investigations of 4H-SiC PiN Power DiodesMeasurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD TechniqueEBIC Analysis of Breakdown Failure Point in 4H-SiC PiN DiodesVJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling ApplicationsElectrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature ApplicationsEffect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect TransistorsHigh-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias StressHigh Temperature Characteristics of 4H-SiC RESURF-Type JFETElectro-Thermal SPICE Model for High-Voltage SiC VJFETsSilicon Carbide Static Induction Transistor with Implanted Buried GateShort-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)Critical Issues for MOS Based Power Devices in 4H-SiCPerformance of 60 A, 1200 V 4H-SiC DMOSFETsImproved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C FaceEffects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFETHigh Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface LayerImprovements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap ChargeEffect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETsEffect of Oxidant in MOCVD-Growth of Al2O3 Gate Insulator on 4H-SiC MOSFET PropertiesEffects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETsComparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented SubstratesHigh Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal FacesAb Initio Calculations of SiO2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) FaceQuasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETsInterface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion LayersInvestigation of On and Off State Characteristics of 4H-SiC DMOSFETsImplications of Threshold-Voltage Instability on SiC DMOSFET OperationChannel Hot-Carrier Effect of 4H-SiC MOSFETLow Frequency Noise in 4H-SiC MOSFETsA New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJTAssessment of High and Low Temperature Performance of SiC BJTs4H-SiC Bipolar Junction Transistors with Graded Base Doping ProfileImplantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking CapabilitySurface Passivation of 4H-SiC for High Current Gain Bipolar Junction TransistorsSimulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTEUltra Low Noise Epitaxial 4H-SiC X-Ray Detectors4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 ?COperation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 ?CDiffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle ProbeCharge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeVPositive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes6H and 4H-SiC Avalanche PhotodiodesSolar-Blind 4H-SiC Avalanche PhotodiodesInfluence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count ProbabilityHigh Temperature Characteristics for UV Responsivity of 3C-SiC pn PhotodiodeSilicon Carbide UV Based Photovoltaic for Hostile EnvironmentsPerspectives of SiC Power Devices in Highly Efficient Renewable Energy Conversion SystemsApplications of SiC-Transistors in Photovoltaic Inverters100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET ModulesSubstantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDsComparison of SiC-JFET and Si-IGBT Inverter LossesHigh Power Density SiC 450A AccuMOSFET for Current Limiting ApplicationsCharacterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and DesignMonocrystalline and Polycrystalline SiC in EADS Astrium Space Applications300?C SiC Blocking Diodes for Solar Array StringsProlonged 500 ?C Operation of 6H-SiC JFET Integrated CircuitryGaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam EvaporationStructural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-CutComparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) SubstratesPhase Formation in Ti-Al-N MAX-Phase Contacts to GaNComposition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing ConditionsProcess Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on SapphireElectrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN SurfacesHigh-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate StructureInfluence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN HeterostructuresHigh Voltage AlGaN/GaN HEMTs Employing a Tapered Field PlateTwo Broadband GaN MMIC Power Amplifiers for EW SystemsImproved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-JunctionSeeded Growth of AlN on (0001)-Plane 6H-SiC SubstratesInfluence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)Large Single Crystal Diamond Plates Produced by Microwave Plasma CVDMetal Contacts to Boron-Doped DiamondRecent Progress of Diamond Device toward Power ApplicationDevice Characteristics Dependence on Diamond SDBs Area
